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Product Detailed Parameters
- Description：MOSFET N-CH 500V 9A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：860mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1160 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：178W (Tc)
- Operating Temperature：-50°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD9N50 is a 500V, 9A N-Channel MOSFET fabricated using an advanced high voltage process. It features a maximum drain-source voltage of 500V and a continuous drain current of 9A at 25°C case temperature. The device has a typical on-resistance of 0.71 ohms and a gate threshold voltage ranging from 3.3V to 4.5V. It operates within a junction temperature range of -50°C to 150°C and includes guaranteed avalanche capability.
Feature Summary
- Advanced high voltage MOSFET process for robust performance in AC-DC applications
- Guaranteed avalanche capability with 100% UIS testing
- Low on-resistance and capacitance values for efficient switching
- Suitable for offline power supply designs
Applications
- Offline power supply designs
- AC-DC converter circuits
- General purpose switching applications
Procurement Notes
Verify the specific package type required, as the datasheet covers both TO252 (AOD9N50) and TO251A/IPAK (AOI9N50). Confirm thermal management requirements against the specified junction-to-case and junction-to-ambient resistance values. Ensure compatibility with the intended operating temperature range and voltage ratings for the target application.
Selection Notes
Select this component for designs requiring a 500V rated N-Channel MOSFET with moderate current handling capabilities. Consider the thermal characteristics and packaging options when designing heat dissipation strategies. Evaluate the switching parameters and gate charge requirements against the driving circuit specifications to ensure optimal performance and efficiency.
Part Context
The AOD9N50 belongs to Alpha & Omega Semiconductor's lineup of high voltage MOSFETs designed for general-purpose and power supply applications. It shares similar electrical characteristics with the AOI9N50 variant, differing primarily in the physical package configuration. This series targets cost-effective solutions for AC-DC converters and other offline power systems.
Replacement Considerations
The AOI9N50 is a direct functional equivalent with identical electrical specifications but utilizes a different package (TO251A/IPAK instead of TO252). Verify pinout compatibility and thermal interface requirements before substituting.
