AOE66410

$1.11

Description：N
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:1e8c1991d021 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：N
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：165 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9000 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：147W
Operating Temperature：-55°C ~ 150°C
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (5x6)
Package / Case：8-PowerVDFN

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AOE66410

Overview

The AOE66410 is a 40V N-Channel MOSFET utilizing AlphaSGT™ technology in a DFN 5x6 XSFET package. It features a maximum drain-source voltage of 40V and continuous drain current of 100A at case temperature. On-resistance is less than 1mΩ at VGS=10V and less than 1.5mΩ at VGS=4.5V. The device supports a pulsed drain current of 400A and avalanche energy of 913mJ. Operating junction temperature ranges from -55°C to 150°C.

Feature Summary

Optimized for common ground secondary-side synchronous rectifier applications
Thermal enhanced XSFET package design
100% UIS tested for ruggedness

Applications

Synchronous rectification in DC/DC converters
Synchronous rectification in AC/DC converters
Chargers

Procurement Notes

Verify the specific orderable part number against the manufacturer's official documentation before procurement. Confirm that the required package form, specifically Tape & Reel, matches the manufacturing standard. Ensure compliance with RoHS and Halogen-Free requirements as stated in the product specifications. Review the terms and conditions of sale provided by Alpha & Omega Semiconductor Inc. for applicable legal and export control regulations.

Selection Notes

Select this component based on its low RDS(ON) characteristics suitable for high-efficiency power conversion. Consider the thermal performance provided by the XSFET package for heat dissipation requirements. Evaluate the gate charge parameters relative to the driving circuit capabilities. Verify that the 40V rating aligns with the system voltage levels and transient conditions.

Part Context

This component belongs to the AlphaSGT™ series of power MOSFETs manufactured by Alpha & Omega Semiconductor Inc. It is designed to offer improved thermal and electrical performance compared to standard trench technologies. The DFN 5x6 XSFET package provides a compact footprint with enhanced thermal conductivity for surface mount applications.