AOE6932

$2.03

Description：MOSFET 2N-CH 30V 55A 8DFN
Series：-

SKU:a3b60111e2ef Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 55A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：55A (Tc), 85A (Tc)
Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15nC @ 4.5V, 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1150pF @ 15V, 4180pF @ 15V
Power - Max：24W, 52W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-VDFN Exposed Pad
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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AOE6932

Overview

The AOE6932 is a dual asymmetric N-channel MOSFET array featuring Bottom Source Technology, housed in an 8-lead DFN 5x6E package. It integrates two distinct transistors: Q1 with a drain-source voltage of 30V and continuous current of 55A, and Q2 rated for 30V and 85A. The device exhibits very low on-resistance, specified as less than 5mΩ for Q1 and less than 1.4mΩ for Q2 at VGS=10V. Designed for high-efficiency power conversion, it includes comprehensive electrical testing including 100% UIS and gate resistance verification.

Feature Summary

Bottom Source Technology architecture
Dual asymmetric N-channel configuration
Very low RDS(ON) performance
High current capability

Applications

DC/DC Converters in Computing, Servers, and POL
Non-Isolated DC/DC Converters in Telecom
Non-Isolated DC/DC Converters in Industrial applications

Procurement Notes

Verify the specific datasheet revision (Rev.2.0 dated July 2016) against the manufacturer's official website to ensure alignment with current production specifications. Confirm that the orderable part number matches the required tape and reel packaging format before finalizing procurement orders.

Selection Notes

Select this component when designing asymmetric dual-channel power stages requiring distinct current handling capabilities within a single footprint. Ensure the thermal design accounts for the junction-to-case resistance values provided in the datasheet to maintain safe operating temperatures under maximum load conditions.

Part Context

This component belongs to Alpha & Omega Semiconductor's portfolio of surface-mount power MOSFETs optimized for compact form factors. The DFN 5x6E package provides enhanced thermal dissipation compared to standard small-outline packages, supporting the high current ratings necessary for modern server and industrial power delivery architectures.