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Product Detailed Parameters
- Description：MOSFET N-CH 600V 1.3A TO251A
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：1.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9Ohm @ 650mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：160 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：-50°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251A
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The AOI1N60 is a 600V, 1.3A N-Channel MOSFET from Alpha & Omega Semiconductor Inc., designed for AC/DC applications. It features an advanced high-voltage process ensuring low RDS(on) and capacitance alongside guaranteed avalanche capability. Key electrical parameters include a maximum drain-source voltage of 600V, continuous drain current of 1.3A at 25°C case temperature, and on-resistance less than 9Ω at VGS=10V. The device operates within a junction temperature range of -50°C to 150°C and is available in the TO-251 (IPAK) package.
Feature Summary
- Advanced high-voltage MOSFET process optimized for robustness in offline power supply designs
- Guaranteed avalanche capability with 100% UIS testing for enhanced reliability
- Low gate charge and input capacitance facilitating efficient switching performance
- Comprehensive thermal management support through verified junction-to-case resistance
Applications
- Offline power supply designs
- AC/DC converter circuits
- General purpose switching applications
Procurement Notes
Verify the specific package variant required, as the AOI1N60 designation corresponds to the TO-251 (IPAK) form factor within the AOD/AOU/AOI family. Confirm that the application does not involve life-support systems, as these uses are explicitly unauthorized by the manufacturer. Ensure design compliance with the specified consumer market qualification standards provided in the datasheet documentation.
Selection Notes
Select this component when a 600V rating and approximately 1.3A continuous current capacity are required in a surface-mount IPAK package. The device is suitable for designs prioritizing avalanche ruggedness due to its tested capabilities. Consider the thermal characteristics and derating curves if operating near the maximum junction temperature limits or utilizing heatsinking strategies.
Part Context
The AOI1N60 belongs to the AOD1N60/AOU1N60/AOI1N60 product family manufactured by Alpha & Omega Semiconductor Inc. These parts share identical electrical specifications but differ in physical packaging. The AOI1N60 specifically utilizes the TO-251 (IPAK) package, distinguishing it from the TO-252 (DPAK) and TO-251A variants found in the same series.
Replacement Considerations
Direct substitutes within the same electrical specification and package include the AOD1N60 and AOU1N60, provided the package type matches the design requirements. Cross-referencing with other manufacturers' 600V, 1.3A N-Channel MOSFETs requires verification of pinout compatibility and thermal resistance values.
