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Product Detailed Parameters
- Description：MOSFET N-CH 600V 2A TO251A
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：325 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：56.8W (Tc)
- Operating Temperature：-50°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251A
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The AOI2N60 is an N-channel power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 2 A at case temperature. The device is housed in a TO-251A package, suitable for through-hole mounting. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±30 V and a power dissipation rating of 56.8 W at case temperature. The component operates within a junction temperature range of -50°C to 150°C.
Feature Summary
- High-voltage capability with a 600 V drain-source breakdown voltage rating.
- Designed for robust thermal performance with a 56.8 W power dissipation capacity at case temperature.
- Utilizes a standard TO-251A through-hole package for reliable board integration.
Applications
- High-voltage switching circuits
- Power supply output stages
- Motor control applications
Procurement Notes
Verify the specific datasheet version for the AOI2N60 to confirm exact pinout configurations and absolute maximum ratings prior to design finalization. Ensure that thermal management solutions align with the specified 56.8 W dissipation limit at case temperature. Confirm compliance with RoHS3 standards if environmental regulations apply to the end product assembly process.
Selection Notes
Select this component when a high-voltage N-channel MOSFET is required for through-hole implementations. The 600 V rating makes it suitable for mains-connected or industrial power systems. Consider the 2 A current limit and thermal requirements carefully against the expected load conditions to ensure safe operation within the specified junction temperature range.
Part Context
This part belongs to the AOI series of N-channel MOSFETs from Alpha & Omega Semiconductor. It shares similar voltage and current specifications with the AOD2N60 but differs in packaging, utilizing the TO-251A form factor instead of the surface-mount TO-252. This distinction dictates the PCB layout and mounting methodology for circuit designers.
Replacement Considerations
The AOD2N60 offers identical electrical characteristics but requires a surface-mount TO-252 footprint. Direct substitution is not possible without redesigning the PCB for the different package outline and mounting style.
