AOI7N60

Single FETs, MOSFETs Overview

The AOI7N60 is an N-channel MOSFET from Alpha & Omega Semiconductor Inc., designed for surface-mount applications in the TO-251A package. It features a drain-source voltage (Vdss) rating of 600 V and supports a continuous drain current (Id) of 7 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 1.3 Ω when driven at 10 V with a drain current of 7 A. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4.5 V max at 250 µA, a total gate charge (Qg) of 12 nC max at 10 V, and an input capacitance (Ciss) of 370 pF max at 25 V. Power dissipation is rated at 178 W (Tc), with an operating junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with a 600 V drain-source breakdown voltage rating suitable for robust power switching environments.
• Optimized gate charge characteristics facilitating efficient drive requirements and reduced switching losses in high-frequency circuits.
• Low thermal resistance design enabling effective heat dissipation through the exposed pad in the TO-251A surface-mount package.

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring isolated or non-isolated step-down/topology configurations
• Motor control systems utilizing low-to-medium current N-channel switching stages
• Power supply output rectification in synchronous buck regulator designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging type and tape/reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors, as these parameters are subject to change based on production schedules and regional availability constraints.

Single FETs, MOSFETs Selection Notes

Select this component for applications demanding a 600 V rating with moderate current handling up to 7 A in a compact surface-mount form factor. Evaluate thermal management requirements carefully, as the 178 W power dissipation rating assumes adequate heatsinking via the TO-251A tab. Ensure gate drive voltages remain within the specified limits to maintain optimal Rds(on) performance and prevent gate oxide degradation.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor’s general-purpose N-channel MOSFET portfolio, targeting cost-sensitive consumer and industrial electronics. The TO-251A package provides a balance between thermal performance and board space efficiency compared to larger through-hole alternatives, fitting into standard SMD assembly workflows for medium-power discrete semiconductor solutions.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 600 V, 7 A N-channel MOSFETs in TO-251A packages from manufacturers such as Vishay, ON Semiconductor, or Infineon. Verify pinout compatibility, Rds(on) values, and thermal characteristics before substitution to ensure circuit integrity and performance parity.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage allowed for the AOI7N60?

The absolute maximum gate-source voltage (Vgs) rating is typically ±20 V, consistent with standard MOSFET specifications in this voltage class, though exact limits should be confirmed in the official datasheet.

Does the AOI7N60 support synchronous rectification?

Yes, its fast switching characteristics and low gate charge make it suitable for use as a synchronous rectifier in DC-DC converter topologies where low conduction losses are critical.