AOK015V65X2

$20.83

Description：650V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:852386035ede Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOK015V65X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 650V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOK015V65X2

Description：650V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：22mOhm @ 24A, 15V
Vgs(th) (Max) @ Id：3.5V @ 24mA
Gate Charge (Qg) (Max) @ Vgs：152 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：4880 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：312W (Tj)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AOK015V65X2

AOK015V65X2

Single FETs, MOSFETs Overview

The AOK015V65X2 is a 650 V αSiC Silicon Carbide Power MOSFET in a TO-247-3L package. It features a typical RDS(ON) of 15 mΩ at VGS = 15 V and ID = 24 A, with a maximum of 22 mΩ at 25°C. The device supports a continuous drain current of 96 A at TC = 25°C and a pulsed current of 200 A. Key dynamic parameters include a total gate charge (Qg) of 152 nC, body diode reverse recovery charge (Qrr) of 238 nC, and output stored energy (EOSS) of 36 µJ at 400 V. It has a maximum junction temperature rating of 175°C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary αSiC technology for low conduction loss and fast switching capabilities.
Optimized for a recommended operating gate drive voltage of +15 V.
Features low gate resistance and capacitance to minimize switching losses.
Demonstrates low body diode reverse recovery charge (Qrr).

Single FETs, MOSFETs Applications

EV Chargers
Solar Inverters
Motor Drives
UPS Systems
SMPS

Single FETs, MOSFETs Procurement Notes

Verify the specific revision level against the latest Alpha & Omega Semiconductor datasheet before finalizing designs. Confirm that the TO-247-3L pinout matches the intended PCB footprint layout. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance for high-power operation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage handling with minimal switching losses. The low Qrr and EOSS values make it suitable for hard-switching topologies. Verify that the system's gate driver can supply the required +15 V operating voltage and handle the 152 nC gate charge efficiently.

Single FETs, MOSFETs Part Context

This part belongs to the αSiC series from Alpha & Omega Semiconductor, designed for high-efficiency power conversion. It replaces standard silicon MOSFETs in high-frequency or high-temperature environments where reduced switching loss and improved thermal performance are critical design constraints.