AOK060V65X2

$6.93

Description：650V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:c5453abeb008 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOK060V65X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 650V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOK060V65X2

Description：650V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：80mOhm @ 6A, 15V
Vgs(th) (Max) @ Id：3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：39.4 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：1165 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：103W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AOK060V65X2

AOK060V65X2

Single FETs, MOSFETs Overview

The AOK060V65X2 is a 650V N-channel Silicon Carbide (SiC) MOSFET in a TO-247-3L package. It features a typical RDS(on) of 60mΩ at VGS=15V and ID=6A, with a maximum of 80mΩ at 25°C. The device supports a continuous drain current of 32A at TC=25°C and a pulsed current of 90A. Key dynamic parameters include a total gate charge (Qg) of 39.4nC, input capacitance (Ciss) of 1165pF, and body diode reverse recovery charge (Qrr) of 74.3nC. It offers a single-pulsed avalanche energy rating of 420mJ and operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary αSiC technology for low conduction and switching losses.
Optimized for fast switching with low gate resistance and capacitance.
Features low reverse recovery charge (Qrr) for the integrated body diode.
Guaranteed 100% Unclamped Inductive Switching (UIS) capability.

Single FETs, MOSFETs Applications

EV Chargers
Solar Inverters
Motor Drives
Uninterruptible Power Supplies (UPS)
Switch Mode Power Supplies (SMPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'X2' against the manufacturer's latest datasheet revision to ensure component equivalence. Confirm that the TO-247-3L tube packaging aligns with assembly requirements. Check for any recent Product Change Notifications (PCN) regarding manufacturing site or material composition changes before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power conversion designs requiring robust avalanche ruggedness. The optimized gate drive voltage of 15V facilitates compatibility with standard SiC gate drivers. Ensure thermal management strategies account for the specified junction-to-case thermal resistance to maintain operation within the 175°C maximum junction temperature limit under load.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's αSiC series, designed for high-voltage applications. It replaces older silicon-based solutions in similar form factors, offering superior thermal performance and switching speed. The TO-247-3L package provides a standardized footprint for through-hole mounting in industrial power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements should be verified against the official substitution list. When substituting, compare RDS(on), Qg, and thermal resistance values to ensure equivalent circuit performance. Note that generic SiC MOSFETs may not match the specific UIS energy ratings or body diode characteristics of this model.