AOK065V120X2

$12.33

Description：SILICON CARBIDE MOSFET, ENHANCEM
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:89b8bf7f5a33 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOK065V120X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is SILICON CARBIDE MOSFET, ENHANCEM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOK065V120X2

Description：SILICON CARBIDE MOSFET, ENHANCEM
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：40.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：85mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：62.3 nC @ 15 V
Vgs (Max)：+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1716 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：187.5W (Tj)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AOK065V120X2

AOK065V120X2

Single FETs, MOSFETs Overview

The AOK065V120X2 is a 1200 V αSiC Silicon Carbide Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a TO-247-3L package with a typical on-resistance of 65 mΩ at 15 V gate drive and 25°C. The device supports a continuous drain current of 40.3 A at 25°C case temperature and handles pulsed currents up to 85 A. Key dynamic parameters include a total gate charge of 62.3 nC, reverse recovery charge of 155 nC, and stored output energy of 30 µJ at 800 V. It is rated for junction temperatures up to 175°C and has passed 100% unclamped inductive switching (UIS) testing.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary αSiC technology for low loss and fast switching speeds.
Optimized for broad driver compatibility with a recommended operating voltage of 15 V.
Features robust body diode characteristics with low reverse recovery charge.
Verified reliability through 100% unclamped inductive switching (UIS) testing.

Single FETs, MOSFETs Applications

Electric Vehicle (EV) Chargers
Solar Inverters
Motor Drives
Uninterruptible Power Supplies (UPS)
Switch Mode Power Supplies (SMPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering part number against the manufacturer's datasheet to ensure correct package type and shipping quantity. Confirm that the component meets RoHS compliance requirements for your region. Check for any recent revisions to the datasheet that may affect electrical specifications or thermal characteristics before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient switching and robust avalanche performance. Ensure the gate driver can support the recommended 15 V operating voltage for optimal on-resistance. Consider the thermal resistance values when designing heatsinking solutions to maintain junction temperatures within the specified 175°C limit under expected load conditions.

Single FETs, MOSFETs Part Context

This silicon carbide power MOSFET belongs to Alpha & Omega Semiconductor's αSiC product line, designed for high-efficiency power conversion. It serves as an alternative to traditional silicon devices in high-voltage systems, offering improved thermal performance and switching speed. The TO-247-3L package facilitates easy mounting onto standard heatsinks used in industrial and automotive power electronics.