AOK065V65X2

$11.76

Description：MOSFET N-CH 650V 40.3A TO247
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:6b1b32f95a81 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOK065V65X2 is listed in the Mosfets range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 650V 40.3A TO247. Review the specifications below when checking this part for your BOM.

Mosfets specifications for AOK065V65X2

Description：MOSFET N-CH 650V 40.3A TO247
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：40.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：85mOhm @ 10A, 15V
Vgs(th) (Max) @ Id：3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：58.8 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：1762 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：187.5W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Mosfets datasheet and documents for AOK065V65X2

AOK065V65X2

Mosfets Overview

The AOK065V65X2 is a 650V Silicon Carbide (SiC) Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes proprietary αSiC technology and is housed in a TO-247-3L through-hole package. The device features a maximum drain-source voltage of 650V, a continuous drain current of 40.3A at 25°C case temperature, and a typical on-resistance of 65mΩ at VGS=15V. Key electrical parameters include a total gate charge of 58.8nC, a body diode reverse recovery charge of 104nC, and an output stored energy of 11µJ. It supports a junction temperature range from -55°C to 175°C.

Mosfets Feature Summary

Proprietary αSiC MOSFET technology enabling low loss and fast switching speeds with low gate resistance.
Optimized drive voltage compatibility for broad driver support.
Robust body diode characteristics with low reverse recovery charge.
100% Unclamped Inductive Switching (UIS) tested for enhanced reliability.

Mosfets Applications

Renewable Energy Systems
Electric Vehicle (EV) Chargers
Solar Inverters
Uninterruptible Power Supplies (UPS)
Switch Mode Power Supplies (SMPS)
Motor Drives

Mosfets Procurement Notes

Verify the specific ordering suffix matches the required shipping quantity and packaging format. Confirm that the component revision aligns with the design requirements. Ensure compliance with RoHS directives and check for any recent Product Change Notifications regarding manufacturing location or material composition updates before finalizing procurement.

Mosfets Selection Notes

Select this component for high-frequency applications requiring low switching losses and robust avalanche capability. The optimized gate drive voltage simplifies driver selection. Evaluate thermal management needs based on the specified junction-to-case thermal resistance. Ensure the application voltage and current ratings remain within the absolute maximum limits defined in the datasheet.

Mosfets Part Context

This part belongs to the AOK series of Silicon Carbide MOSFETs from Alpha & Omega Semiconductor. It is designed as a high-performance replacement for traditional silicon devices in medium to high-power conversion systems. The TO-247-3L package provides efficient heat dissipation capabilities suitable for industrial and automotive environments.

Mosfets Replacement Considerations

Direct pin-compatible replacements may exist within the same manufacturer's portfolio or from other SiC vendors. Verify that substitute parts meet the identical voltage, current, and thermal specifications. Cross-reference gate charge and threshold voltage to ensure driver compatibility without circuit modification.