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The AOK20B65M1 is a 650V, 20A Alpha IGBT with an integrated anti-parallel diode. It features a collector-emitter saturation voltage of 1.7V at TJ=25°C and 2.02V at TJ=125°C. The device offers a short-circuit withstand time of 5μs and a maximum junction temperature of 175°C. Electrical characteristics include a gate threshold voltage of 5.1V and total gate charge of 46nC. Switching parameters at TJ=25°C show turn-off energy of 0.27mJ and diode reverse recovery charge of 0.8μC.
Verify the specific package type (TO-220, TO-247, or TO-263) and ordering suffix when sourcing. Confirm that the component matches the exact Alpha & Omega Semiconductor part number. Ensure the datasheet revision aligns with design requirements. Check for any specific handling instructions regarding thermal management during installation.
Select based on required breakdown voltage and continuous current ratings. Consider thermal resistance values for heat sink design. Evaluate switching losses against operating frequency. Verify compatibility with gate drive voltages and short-circuit protection capabilities. Assess diode reverse recovery characteristics for EMI performance.
This component belongs to the AOT(B)20B65M1 family from Alpha & Omega Semiconductor. It shares core electrical specifications with variants like AOT20B65M1 and AOB20B65M1. Differences primarily lie in packaging formats such as TO-220, TO-247, and TO-263. The family utilizes Alpha IGBT technology for improved performance.
Direct substitutes include AOT20B65M1 and AOB20B65M1. These share identical electrical ratings and functionality. Verify package compatibility before substitution. Ensure thermal interface materials match the new package type.