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Product Detailed Parameters
- Description：IGBT 1350V 60A TO-247
- Series：RC-IGBT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1350 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 30A
- Power - Max：288 W
- Switching Energy：1.45mJ (off)
- Input Type：Standard
- Gate Charge：65 nC
- Td (on/off) @ 25°C：-/110ns
- Test Condition：600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The AOK30B135C1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Alpha & Omega Semiconductor Inc. It features a maximum collector-emitter breakdown voltage of 1350 V and a continuous collector current rating of 30 A at 25°C. The device utilizes a TO-247 package for through-hole mounting, supporting a maximum power dissipation of 340 W. Key electrical characteristics include a gate charge of 62 nC and a turn-off switching energy of 1.47 mJ under test conditions of 600 V, 30 A, and 10 Ω. The component operates within a junction temperature range of -55°C to 175°C.
Feature Summary
- High-voltage capability with 1350 V collector-emitter breakdown rating
- Robust thermal performance in a TO-247 through-hole package
- Standard input type compatible with common gate drive circuits
Applications
- Industrial motor drives and inverters
- Switched-mode power supplies (SMPS)
- Welding equipment power stages
Procurement Notes
Verify the specific suffix 'C1' against official manufacturer documentation to confirm exact binning or revision status. Confirm RoHS compliance and REACH status via the latest datasheet. Check for End-of-Life notices or Product Change Notifications prior to procurement to ensure long-term availability.
Selection Notes
Select this component when a high-voltage IGBT with moderate current handling is required. Ensure the gate drive circuit can supply sufficient current to manage the 62 nC gate charge. Verify that the thermal management solution can dissipate up to 340 W under worst-case operating conditions.
Part Context
This part belongs to the Alpha IGBT™ series from Alpha & Omega Semiconductor Inc. It is related to the AOK30B135W1 variant, which shares similar core specifications but may differ in packaging or specific testing parameters. Both are designed for high-power switching applications requiring reliable high-voltage performance.
Replacement Considerations
The AOK30B135W1 is a documented alternative within the same product family. Verify pinout compatibility and thermal resistance values before substitution. No other direct cross-references are confirmed in public sources.
