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Product Detailed Parameters
- Description：IGBT 650V 80A TO-247
- Series：Alpha IGBT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 40A
- Power - Max：300 W
- Switching Energy：1.27mJ (on), 460µJ (off)
- Input Type：Standard
- Gate Charge：63 nC
- Td (on/off) @ 25°C：41ns/130ns
- Test Condition：400V, 40A, 7.5Ohm, 15V
- Reverse Recovery Time (trr)：346 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The AOK40B65H1 is a 650V, 40A Alpha IGBT in a TO-247 package. It integrates a soft and fast recovery anti-parallel diode. Key electrical parameters include a collector-emitter saturation voltage of 1.9V at 25°C and 2.36V at 125°C. The device supports a continuous collector current of 40A at 100°C case temperature. Switching characteristics at 175°C include turn-off energy of 0.46mJ and total switching energy of 1.73mJ. Thermal resistance from junction to case is 0.5°C/W for the IGBT and 1.5°C/W for the diode.
Feature Summary
- Utilizes latest Alpha IGBT technology for high efficiency.
- Features very fast and soft recovery freewheeling diode.
- Provides high efficient turn-on di/dt controllability.
- Ensures short-circuit ruggedness with 5us withstand time.
Applications
- Welding Machines
- Motor Drives
- UPS & Solar Inverters
- Very High Switching Frequency Applications
Procurement Notes
Verify the specific ordering suffix H1 against official Alpha & Omega Semiconductor documentation to confirm package type and tube packaging details. Ensure component authenticity through authorized distribution channels. Confirm that the product meets consumer market qualification standards as specified in the datasheet.
Selection Notes
Select this component for applications requiring 650V blocking capability and 40A continuous current handling. Consider the low turn-off switching loss and soft diode recovery for high-frequency inverter designs. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values for both IGBT and diode sections.
Part Context
This part belongs to the Alpha IGBT family from Alpha & Omega Semiconductor. It is designed for power conversion applications. The TO-247 package provides robust mechanical stability. The integrated diode simplifies circuit design by eliminating the need for external parallel components.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing gate drive circuits when considering alternative devices.
FAQ
What is the maximum short-circuit withstand time?
The maximum short-circuit withstand time is 5 microseconds under conditions of VGE=15V, VCC≤300V, and TJ≤175°C.
What is the typical reverse recovery charge of the anti-parallel diode?
At TJ=175°C, IF=40A, and dI/dt=200A/μs, the typical reverse recovery charge (Qrr) is 1 μC.
How does the collector-emitter saturation voltage vary with temperature?
The typical VCE(sat) increases with temperature: 1.9V at 25°C, 2.36V at 125°C, and 2.63V at 175°C.
