AOK40B65HQ3

$1.38

Description：IGBT 650V 80A TO-247
Series：AlphaIGBT™

SKU:811d01f1d1c2 Category: Single IGBTs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：IGBT 650V 80A TO-247
Series：AlphaIGBT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 40A
Power - Max：312 W
Switching Energy：1.19mJ (on), 380µJ (off)
Input Type：Standard
Gate Charge：61 nC
Td (on/off) @ 25°C：31ns/110ns
Test Condition：400V, 40A, 7.5Ohm, 15V
Reverse Recovery Time (trr)：106 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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AOK40B65HQ3

Overview

The AOK40B65HQ3 is a 650V AlphaIGBT with an integrated anti-parallel diode, packaged in TO247. It supports a continuous collector current of 40A at TC=100°C and 80A at TC=25°C. The collector-emitter saturation voltage is 2.05V at TJ=25°C and IC=40A. Switching parameters measured at VGE=15V, VCC=400V, IC=40A, and RG=7.5W include turn-on energy of 1.02mJ and turn-off energy of 0.48mJ at TJ=25°C. The device features a maximum junction-to-case thermal resistance of 0.48°C/W for the IGBT and 2.78°C/W for the diode.

Feature Summary

Utilizes latest AlphaIGBT technology for high switching speed and low Qrr
Features soft and fast recovery anti-parallel diode to minimize turn-off switching loss
Provides very good EMI behavior due to optimized switching characteristics

Applications

PFC application for air-conditioners
Solar inverter
Welding machines

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm package form and compliance status. Confirm that the component meets all applicable export control rules and regulatory requirements for the intended destination before procurement.

Selection Notes

Evaluate the thermal impedance curves and current de-rating graphs to ensure adequate heat sinking for the target operating temperature range. Verify gate drive voltage and resistance values align with the specified switching parameter test conditions to achieve expected performance levels.

Part Context

This component belongs to the AlphaIGBT product line from Alpha & Omega Semiconductor Inc., designed for medium-power switching applications requiring robust performance and efficient thermal management within the TO247 package format.

Replacement Considerations

Consult official manufacturer resources for confirmed substitute part numbers. Ensure any replacement matches the 650V rating, 40A continuous current capability, and TO247 package dimensions.

FAQ

What are the typical switching times at TJ=175°C?

At TJ=175°C, VGE=15V, VCC=400V, IC=40A, and RG=7.5W, the turn-on delay time is 34ns, rise time is 30ns, turn-off delay time is 158ns, and fall time is 18ns.

What is the reverse recovery charge of the integrated diode?

The diode reverse recovery charge (Qrr) is typically 0.24mC at TJ=25°C and 0.51mC at TJ=175°C, measured under IF=10A, di/dt=200A/ms, and VCC=400V conditions.