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Product Detailed Parameters
- Description：IGBT 650V 120A TO-247
- Series：AlphaIGBT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 60A
- Power - Max：416 W
- Switching Energy：2.36mJ (on), 1.17mJ (off)
- Input Type：Standard
- Gate Charge：84 nC
- Td (on/off) @ 25°C：35ns/168ns
- Test Condition：400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr)：318 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The AOK60B65H2AL is a 650V AlphaIGBT with an integrated anti-parallel diode in a TO-247 package. It features a collector-emitter saturation voltage of 1.95V at 25°C and 60A, with a maximum rating of 2.5V. The device supports a continuous collector current of 60A and a pulsed current of 180A. Total gate charge is 84nC, while turn-off and turn-on switching energies are 1.17mJ and 2.36mJ respectively. The integrated diode exhibits a reverse recovery time of 318ns and a peak reverse recovery current of 6.0A.
Feature Summary
- Utilizes latest AlphaIGBT technology for high efficiency and very high switching speed.
- Features a soft and fast recovery anti-parallel diode to improve EMI behavior.
- Provides high efficient turn-on di/dt controllability and low turn-off switching loss.
Applications
- Welding Machines
- UPS & Solar Inverters
- Very High Switching Frequency Applications
Procurement Notes
Verify the specific ordering suffix AL against official documentation to confirm packaging details. Confirm that the minimum order quantity aligns with standard tube packaging requirements. Ensure thermal management designs account for the specified junction-to-case resistance values during operation.
Selection Notes
Select this component for applications requiring 650V blocking capability with integrated freewheeling diodes. Evaluate thermal performance based on the provided transient thermal impedance curves. Consider the gate charge and switching energy parameters when designing driver circuits for optimal efficiency.
Part Context
This part belongs to the AlphaIGBT series from Alpha & Omega Semiconductor Inc. It is designed as a single N-channel IGBT module. The product is available in a TO-247 through-hole package suitable for power electronics applications.
Replacement Considerations
STGIB8CH60TS-L by STMicroelectronics is listed as a similar replacement option.
FAQ
What is the typical reverse recovery time for the integrated diode?
The typical reverse recovery time (Trr) is 318 ns under standard test conditions.
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (BVCES) is 650 V.
How does the collector-emitter saturation voltage vary with temperature?
The saturation voltage increases with temperature, rising from 1.95V at 25°C to 2.58V at 150°C.
