AOL1206

Description：MOSFET N-CH 30V 16A/54A ULTRASO8
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:cde200b1a94c Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOL1206 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 16A/54A ULTRASO8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOL1206

Description：MOSFET N-CH 30V 16A/54A ULTRASO8
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1670 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta), 62W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：UltraSO-8™
Package / Case：3-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AOL1206

AOL1206

Single FETs, MOSFETs Overview

The AOL1206 is a surface-mount N-channel MOSFET in an UltraSO-8 package. It features a drain-source voltage of 30V and a continuous drain current of 54A at TC=25°C. The on-resistance is less than 6mΩ at VGS=10V and less than 8.5mΩ at VGS=4.5V. Power dissipation reaches 62W at TC=25°C and 2.7W at TA=25°C. The junction temperature range spans -55°C to 175°C, with a maximum junction-to-case thermal resistance of 2.4°C/W.

Single FETs, MOSFETs Feature Summary

Utilizes trench MOSFET technology optimized for efficient high-frequency switching performance.
Minimizes power losses through an extremely low combination of RDS(ON) and Crss.
Features a Schottky-style soft recovery body diode for well-controlled switching behavior.
Subjected to 100% testing for unclamped inductive switching (UIS) capability and gate resistance.

Single FETs, MOSFETs Applications

High frequency switching applications
Power management circuits requiring low conduction loss
Systems utilizing the integrated body diode for synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging configurations. Ensure that the component selection aligns with the consumer market qualification status defined by Alpha & Omega Semiconductor. Confirm compliance with RoHS standards and lead-free requirements prior to integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V N-channel MOSFET with high current handling capabilities is required. The UltraSO-8 package offers a compact footprint suitable for space-constrained designs. Consider the thermal resistance characteristics and derating curves to ensure reliable operation within the specified junction temperature limits under expected load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the Alpha & Omega Semiconductor lineup of trench MOSFETs. It is designed specifically for consumer market applications. The product utilizes advanced trench technology to achieve superior electrical performance compared to standard planar devices, focusing on minimizing switching and conduction losses.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists from Alpha & Omega Semiconductor for verified substitutes. Ensure any replacement maintains compatibility with the UltraSO-8 package dimensions and meets or exceeds the 30V voltage rating and 54A current capacity specifications.