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AON2410 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N CH 30V 8A DFN 2X2B. Review the specifications below when checking this part for your BOM.
The AON2410 is a 30V N-Channel MOSFET utilizing advanced trench technology for extremely low RDS(ON). It features an 8A continuous drain current at VGS=4.5V and a pulsed drain current of 32A. The device operates within a junction temperature range of -55°C to 150°C. Electrical characteristics include a maximum gate-source voltage of ±12V, a typical gate threshold voltage of 1.07V, and a total gate charge of 12nC. Thermal performance specifies a junction-to-ambient resistance of 80°C/W in still air.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and compliance specifications. Confirm that the component meets all applicable RoHS and environmental standards required for the intended deployment environment before finalizing procurement orders.
Select this component when a compact DFN 2x2B package is required for high-efficiency power switching. Ensure the design accommodates the thermal constraints defined by the junction-to-ambient resistance values provided in the datasheet for the specific PCB copper layout being utilized.
This part belongs to Alpha & Omega Semiconductor's portfolio of power MOSFETs designed for portable computers, LED lighting, and industrial motor control. The company utilizes advanced semiconductor process technologies to deliver solutions for complex power requirements across consumer and industrial electronics sectors.
Consult the official Alpha & Omega Semiconductor product selector or datasheet for verified substitute part numbers. Do not assume electrical compatibility with other manufacturers' devices without rigorous cross-referencing of absolute maximum ratings and dynamic parameters.
The AON2410 supports a repetitive pulsed drain current of 32A, limited by the junction temperature.
The on-resistance is specified as less than 21mΩ at VGS=4.5V and less than 28mΩ at VGS=2.5V.
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