AON2707

Description：MOSFET P-CH 30V 4A 6DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:35b6cad85b2c Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AON2707 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET P-CH 30V 4A 6DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON2707

Description：MOSFET P-CH 30V 4A 6DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：117mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：305 pF @ 15 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：2.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-DFN (2x2)
Package / Case：6-WDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for AON2707

AON2707

Single FETs, MOSFETs Overview

The AON2707 is a surface-mount P-Channel MOSFET integrated with a Schottky diode, manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of -30V and a continuous drain current of -4A at VGS=-10V. On-resistance values are less than 117mΩ at VGS=-10V, 138mΩ at VGS=-4.5V, and 193mΩ at VGS=-2.5V. The integrated Schottky diode offers a reverse voltage of 20V and a forward current of 2A. Thermal resistance (junction-to-ambient) is rated at 85°C/W in still air.

Single FETs, MOSFETs Feature Summary

Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
Integrated Schottky diode facilitates bidirectional blocking switch implementation.
Designed for efficient DC-DC conversion applications.
Typical ESD protection rating of HBM Class 2.

Single FETs, MOSFETs Applications

Bidirectional blocking switches
DC-DC conversion circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific package marking and date code against the manufacturer's latest datasheet revision to ensure component authenticity. Confirm that the application environment remains within the specified consumer market scope, as critical life support uses are explicitly unauthorized. Check thermal management requirements against the provided junction-to-ambient resistance data for your specific board layout.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-Channel solution with an integrated fast-recovery diode is required. The low gate charge supports high-frequency switching efficiency. Ensure the operating voltage does not exceed the -30V drain-source limit. Verify that the thermal design accommodates the 85°C/W junction-to-ambient resistance under steady-state conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of power MOSFETs utilizing trench technology. It is designed primarily for the consumer electronics market. The integration of the Schottky diode distinguishes it from standard discrete MOSFETs, offering a space-saving solution for synchronous rectification or blocking applications.