AON2801L#A

Overview

The AON2801L#A is a dual P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a maximum drain-source voltage of -20V and a continuous drain current of -3A. Key electrical parameters include an on-resistance of less than 160mΩ at VGS = -2.5V and less than 200mΩ at VGS = -1.8V. It operates within a junction temperature range of -55°C to 150°C and is housed in a DFN-6 surface-mount package.

Feature Summary

• Dual P-channel configuration utilizing advanced trench technology for enhanced performance
• Capable of operation with gate voltages as low as 1.8V for efficient logic-level driving
• Designed for low on-resistance and minimal gate charge to improve switching efficiency

Applications

• Load switch applications requiring low voltage control
• Pulse Width Modulation (PWM) control circuits
• Battery protection and management systems

Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code against official Alpha & Omega Semiconductor documentation. Confirm that the suffix #A indicates RoHS compliance and halogen-free status as specified in the datasheet. Ensure the ordering information matches the exact part number AON2801L#A to avoid confusion with the standard AON2801 variant, although they are electrically identical.

Selection Notes

Select this component when a dual P-channel MOSFET is required for space-constrained designs due to its compact DFN-6 package. It is suitable for applications needing reliable switching at low gate drive voltages, specifically below 2.5V. Engineers should consider the thermal dissipation capabilities of the package and ensure the operating conditions remain within the specified -20V drain-source voltage and -3A current limits.

Part Context

The AON2801L#A belongs to the AON2801 series from Alpha & Omega Semiconductor, which focuses on high-efficiency power switching solutions. This series employs trench MOSFET technology to minimize conduction losses. The 'L' suffix typically denotes specific lot or packaging variations, while '#A' confirms environmental compliance. It serves as a direct functional equivalent to the standard AON2801 in circuit designs.

Replacement Considerations

Publicly confirmed substitute part numbers for the AON2801L#A were not identified in the provided source material. Designers should consult official manufacturer cross-reference tools for verified alternatives.