AON3820

Overview

The AON3820 is a dual N-channel MOSFET utilizing AlphaMOS LV trench technology, housed in a DFN 3x3 package. It features a drain-source voltage (VDS) of 24 V and a continuous drain current (ID) of 8 A at 25°C. The device offers low on-resistance, specified as less than 8.9 mΩ at VGS=4.5V and ID=8A, and less than 11.8 mΩ at VGS=2.5V and ID=4A. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from 0.5 V to 1.3 V, total gate charge (Qg) of 12.5 nC typical, and input capacitance (Ciss) of 1325 pF. The component supports a maximum junction temperature of 150°C and includes typical ESD protection rated at HBM Class 3A.

Feature Summary

• Dual N-Channel Configuration: Integrates two independent channels within a compact footprint for space-constrained designs.
• Low On-Resistance Technology: Utilizes AlphaMOS LV trench process to minimize conduction losses across various gate drive voltages.
• Enhanced Gate Drive Compatibility: Optimized low gate charge and threshold voltage facilitate efficient switching with standard logic-level drivers.
• Robust ESD Protection: Incorporates built-in electrostatic discharge protection meeting HBM Class 3A standards.

Applications

• Battery protection switches
• Mobile device battery charging circuits
• Mobile device battery discharging circuits

Procurement Notes

Verify the specific orderable part number against the manufacturer's official documentation to ensure correct packaging and form factor. Confirm that the component meets RoHS and halogen-free compliance requirements for your manufacturing process. Ensure the application environment remains within the consumer market scope, as critical life support uses are explicitly excluded by the manufacturer.

Selection Notes

Select this component when a dual-channel solution is required in a minimal DFN 3x3 footprint. Evaluate the thermal performance based on the specific PCB copper area and ambient conditions, as the junction-to-ambient resistance varies significantly with board design. Consider the 24V rating and 8A continuous current limits relative to the peak load requirements and duty cycle of the target application.

Part Context

The AON3820 belongs to the AlphaMOS LV series from Alpha & Omega Semiconductor, designed specifically for low-voltage applications. It complements other power MOSFETs in the portfolio by offering a dual-channel configuration in a small surface-mount package. This series targets portable electronics where size efficiency and low power consumption are critical design constraints.

Replacement Considerations

No public substitute part numbers are documented in the provided source material. Verify pinout compatibility and electrical specifications if considering alternative manufacturers for this dual-channel 24V MOSFET application.

FAQ

What is the maximum continuous drain current for the AON3820?

The maximum continuous drain current (ID) is 8 A at an ambient temperature of 25°C.

Does the AON3820 support logic-level gate driving?

Yes, the device is optimized for low gate drive voltages, with an on-resistance of less than 11.8 mΩ at VGS=2.5V and ID=4A.

What is the package type for the AON3820?

The AON3820 is available in a DFN 3x3 package.