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AON4421 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET P-CH 30V 8A 8DFN. Review the specifications below when checking this part for your BOM.
The AON4421 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -8A at VGS=-10V. The device offers an on-state resistance (RDS(ON)) of less than 26mΩ at VGS=-10V and less than 34mΩ at VGS=-4.5V. Packaged in a compact DFN 3x2 surface-mount format, it includes ESD protection and complies with RoHS standards.
Verify the specific package marking and date code against the manufacturer's latest datasheet revision before integration. Confirm that the thermal performance meets your board design requirements, as junction-to-ambient resistance depends heavily on copper area and airflow conditions. Ensure compatibility with your system's logic voltage levels given the threshold specifications.
Select this component when a compact P-channel solution is required for low-voltage power paths. The dual RDS(ON) ratings support both standard and logic-level drive voltages. Consider the thermal constraints of the DFN 3x2 package for high-current applications, ensuring adequate PCB copper pour for heat dissipation to maintain reliability within the specified temperature range.
This part belongs to Alpha & Omega Semiconductor's portfolio of power MOSFETs designed for portable and industrial electronics. The company focuses on high-performance discrete devices and ICs. The AON4421 fits into their lineup of trench technology-based transistors aimed at improving efficiency in space-constrained designs.
No public substitute part numbers are documented in the provided source material.
The absolute maximum rating for Gate-Source Voltage (VGS) is ±20V.
Yes, the datasheet specifies forward voltage (VSD) and reverse recovery time (trr) parameters, indicating the presence of an intrinsic body diode.
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