Single FETs, MOSFETs AON6236 product image

AON6236

$0.89
  • Description:MOSFET N-CH 40V 19A/30A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:24e870f641b2 Category: Brand:

  
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AON6236 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 40V 19A/30A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON6236

  • Description:MOSFET N-CH 40V 19A/30A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:19A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:7mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1225 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):4.2W (Ta), 39W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN (5x6)
  • Package / Case:8-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AON6236

AON6236

Single FETs, MOSFETs Overview

The AON6236 is a 40V N-Channel MOSFET utilizing trench technology optimized for high-frequency switching. It features a maximum drain-source voltage (BVDSS) of 40V and a continuous drain current (ID) of 30A at VGS=10V. The on-resistance (RDS(ON)) is less than 7mΩ at VGS=10V and less than 10.5mΩ at VGS=4.5V. The device supports a pulsed drain current (IDM) of 120A and has been tested for 100% UIS and Rg. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Trench MOSFET technology optimized for efficient high-frequency switching performance with minimized power losses.
  • Soft recovery body diode behavior characterized as "Schottky style" to control switching characteristics.
  • Validated reliability through 100% Unclamped Inductive Switching (UIS) and gate resistance testing.

Single FETs, MOSFETs Applications

  • High-frequency power switching circuits
  • Power management systems requiring low conduction losses
  • Applications utilizing synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the specific package marking and date code against the manufacturer's latest datasheet revision. Confirm that the intended operating environment aligns with the specified thermal resistance values, as power dissipation depends heavily on board copper area and airflow conditions. Ensure compliance with export control regulations and liability disclaimers regarding life support applications before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 40V rating is sufficient and low RDS(ON) is critical for efficiency. Consider the DFN5X6 package constraints for thermal management. Evaluate the gate charge specifications against drive capability requirements to ensure adequate switching speeds without excessive driver loss.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of N-Channel MOSFETs designed for power management solutions. The company specializes in power integrated circuits and discrete semiconductors for consumer electronics, computing, and industrial systems. The AON6236 represents their trench technology offerings aimed at reducing switching losses.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage class if supply chain constraints exist. Verify that any substitute maintains comparable RDS(ON) and gate charge characteristics to preserve circuit efficiency and switching timing.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the AON6236?

The maximum pulsed drain current (IDM) is 120A, limited by the junction temperature.

How does the body diode behave during reverse recovery?

The body diode exhibits "Schottky style" soft recovery, which helps control switching behavior and reduce associated losses.

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