SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
AON6236 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 40V 19A/30A 8DFN. Review the specifications below when checking this part for your BOM.
The AON6236 is a 40V N-Channel MOSFET utilizing trench technology optimized for high-frequency switching. It features a maximum drain-source voltage (BVDSS) of 40V and a continuous drain current (ID) of 30A at VGS=10V. The on-resistance (RDS(ON)) is less than 7mΩ at VGS=10V and less than 10.5mΩ at VGS=4.5V. The device supports a pulsed drain current (IDM) of 120A and has been tested for 100% UIS and Rg. It operates within a junction temperature range of -55°C to 150°C.
Verify the specific package marking and date code against the manufacturer's latest datasheet revision. Confirm that the intended operating environment aligns with the specified thermal resistance values, as power dissipation depends heavily on board copper area and airflow conditions. Ensure compliance with export control regulations and liability disclaimers regarding life support applications before procurement.
Select this component when a 40V rating is sufficient and low RDS(ON) is critical for efficiency. Consider the DFN5X6 package constraints for thermal management. Evaluate the gate charge specifications against drive capability requirements to ensure adequate switching speeds without excessive driver loss.
This part belongs to Alpha & Omega Semiconductor's portfolio of N-Channel MOSFETs designed for power management solutions. The company specializes in power integrated circuits and discrete semiconductors for consumer electronics, computing, and industrial systems. The AON6236 represents their trench technology offerings aimed at reducing switching losses.
Check for direct pin-compatible alternatives within the same voltage class if supply chain constraints exist. Verify that any substitute maintains comparable RDS(ON) and gate charge characteristics to preserve circuit efficiency and switching timing.
The maximum pulsed drain current (IDM) is 120A, limited by the junction temperature.
The body diode exhibits "Schottky style" soft recovery, which helps control switching behavior and reduce associated losses.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.