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AON6502 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 49A/85A 8DFN. Review the specifications below when checking this part for your BOM.
The AON6502 is a 30V N-Channel AlphaMOS MOSFET in an 8DFN package. It features a maximum drain-source voltage of 30V and a continuous drain current of 85A at 25°C case temperature. The on-resistance is less than 2.2mΩ at VGS=10V and 2.7mΩ at VGS=4.5V. Total gate charge is 64nC at 10V. Thermal resistance junction-to-case is 1.5°C/W, with a junction temperature range of -55°C to 150°C.
Verify the specific datasheet revision, currently Rev 1.1 from September 2023, matches your design requirements. Confirm that the 8DFN footprint aligns with your PCB layout constraints. Ensure thermal management strategies account for the specified junction-to-case resistance values under your expected operating conditions.
Select this component when a 30V logic-level N-channel MOSFET is required for high-current applications. The low RDS(on) at both 4.5V and 10V gate voltages makes it suitable for various drive environments. Consider the 8DFN package size for space-constrained designs requiring robust thermal performance.
This device belongs to the AlphaMOS series by Alpha & Omega Semiconductor Inc., designed for power management applications. It represents the company's trench technology implementation aimed at reducing conduction losses while maintaining high current capabilities in compact surface-mount packages.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum pulsed drain current (IDM) is 334A.
Yes, the datasheet confirms the device is 100% UIS (Unclamped Inductive Switching) tested.
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