Single FETs, MOSFETs AON6506 product image

AON6506

$0.70
  • Description:MOSFET N-CH 30V 33A/36A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c6189a7d8636 Category: Brand:

  
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AON6506 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 33A/36A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON6506

  • Description:MOSFET N-CH 30V 33A/36A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:33A (Ta), 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2719 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):4.2W (Ta), 83W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN (5x6)
  • Package / Case:8-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AON6506

AON6506

Single FETs, MOSFETs Overview

The AON6506 is a 30V N-Channel AlphaMOS MOSFET in an 8-DFN(5x6) package. It features a maximum drain-source voltage of 30V and a continuous drain current of 36A at 25°C case temperature. The on-resistance is less than 2.6mΩ at VGS=10V and 20A, or less than 3.8mΩ at VGS=4.5V and 20A. Gate charge is 60nC max at 10V. Thermal resistance junction-to-case is 1.5°C/W, with a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes latest Trench Power AlphaMOS (αMOS LV) technology for optimized performance.
  • Provides very low RDS(on) specifically at 4.5V gate-source voltage.
  • Features low gate charge and high current capability.
  • Includes integrated body diode with tested reverse recovery characteristics.

Single FETs, MOSFETs Applications

  • DC/DC Converters in Computing
  • DC/DC Converters in Servers
  • Point-of-Load (POL) Applications
  • Isolated DC/DC Converters in Telecom
  • Isolated DC/DC Converters in Industrial

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm packaging type, as standard distribution often utilizes tape and reel formats. Confirm RoHS and Halogen-Free compliance status matches project requirements. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability. Check for any recent Product Change Notices (PCN) regarding manufacturing site or material changes before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses at both 10V and 4.5V logic-level drive voltages. The 8-DFN(5x6) package offers a compact footprint suitable for space-constrained designs. Evaluate thermal management needs based on the 1.5°C/W junction-to-case resistance for high-current scenarios. Consider the 30V rating for systems operating within this voltage boundary.

Single FETs, MOSFETs Part Context

The AON6506 belongs to Alpha & Omega Semiconductor's AlphaMOS product line, utilizing advanced trench technology. It is designed as a general-purpose power switch for efficient energy conversion. The device is qualified for the consumer market and is manufactured in compliance with environmental standards.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly confirmed in the provided documentation. Verify pinout compatibility and electrical parameters against potential alternatives such as other 30V N-Channel DFN MOSFETs from different manufacturers if cross-referencing is required.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is 90A.

Is the device tested for avalanche ruggedness?

Yes, the datasheet confirms that the AON6506 is 100% UIS (Unclamped Inductive Switching) tested.

What is the typical gate threshold voltage range?

The gate threshold voltage (VGS(th)) ranges from 1.2V to 2.2V at TJ=25°C and ID=250µA.

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