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AON6532P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 68A 8DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AON6532P
- Description：MOSFET N-CH 30V 68A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：710mV @ 1A
- Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1080 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：35.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (5x6)
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for AON6532P
Single FETs, MOSFETs Overview
The AON6532P is an N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a maximum drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 68 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 3.5 mΩ at 10 V gate drive with 40 A drain current. Power dissipation reaches 35.7 W at case temperature. It utilizes an 8-DFN (5x6 mm) surface-mount package with exposed pad for thermal management.
Single FETs, MOSFETs Feature Summary
- High current handling capability with 68 A continuous drain rating
- Ultra-low on-resistance for improved power efficiency
- Surface-mount design optimized for thermal performance
Single FETs, MOSFETs Applications
- DC-DC converter output stages
- Motor control circuits
- Power distribution networks
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and electrical parameters against official Alpha & Omega Semiconductor documentation before integration. Confirm that the 8-DFN footprint matches the target PCB layout, particularly regarding the exposed thermal pad dimensions and soldering requirements to ensure reliable thermal dissipation during operation.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-channel MOSFET with high current capacity and low conduction losses is required in a compact form factor. The 30 V rating suits low-voltage applications. Ensure the thermal design accounts for the 35.7 W dissipation limit at case temperature to maintain junction temperatures within the specified -55°C to 150°C range under expected load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the AON65xx series from Alpha & Omega Semiconductor, which focuses on high-performance N-channel MOSFETs for power switching applications. The series is characterized by advanced cell technology designed to minimize on-resistance while maintaining robust avalanche capabilities and fast switching speeds suitable for modern power electronics.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other 30 V, ~68 A N-channel MOSFETs in 8-DFN packages such as the AON6532 or similar devices from the same manufacturer family, provided pinout compatibility and thermal characteristics are verified.
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