Single FETs, MOSFETs AON6560 product image

AON6560

$0.76
  • Description:MOSFET N-CH 30V 84A/200A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:77c11df02928 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AON6560 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 84A/200A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON6560

  • Description:MOSFET N-CH 30V 84A/200A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:84A (Ta), 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:0.62mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:325 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:11500 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):7.3W (Ta), 208W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN (5x6)
  • Package / Case:8-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AON6560

AON6560

Single FETs, MOSFETs Overview

The AON6560 is a 30V N-Channel AlphaMOS (αMOS LV) technology MOSFET in an 8-pin DFN 5x6 package. It features a maximum drain-source voltage of 30V and continuous drain current of 200A. On-resistance is less than 0.68mΩ at VGS=10V and less than 1.1mΩ at VGS=4.5V. The device has a gate threshold voltage of 1.4V to 2.2V, total gate charge of 230nC to 325nC at 10V, and input capacitance of 11500pF. Thermal resistance junction-to-case is 0.6°C/W, with power dissipation up to 208W at TC=25°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes latest Trench Power AlphaMOS (αMOS LV) technology for low on-resistance and high current capability.
  • Features low gate charge characteristics suitable for efficient switching applications.
  • Includes 100% UIS testing and 100% Rg testing for enhanced reliability.

Single FETs, MOSFETs Applications

  • High performance ORing circuits
  • Efuse implementations
  • Ultra high current battery charge/discharge systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity of 3000 units. Confirm compliance with RoHS and Halogen-Free standards as stated in the product summary. Ensure the component is intended for consumer market applications, as critical life support uses are not authorized by the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V rating and high continuous current handling near 200A are required. The low on-resistance values at both 10V and 4.5V drive voltages make it suitable for logic-level control. Consider the thermal requirements given the low junction-to-case resistance for effective heat dissipation in compact designs.

Single FETs, MOSFETs Part Context

This part belongs to the AlphaMOS family from Alpha & Omega Semiconductor Inc., designed for power management solutions. It utilizes advanced trench technology to achieve high performance in a compact surface-mount package. The series focuses on low on-resistance and fast switching capabilities for modern electronic devices.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 800A.

Is the device tested for avalanche energy?

Yes, the datasheet specifies that the device undergoes 100% Unclamped Inductive Switching (UIS) testing.

AON6560AON6560
$0.76
Buy Now