AON6572

$0.27

Description：MOSFET N-CH 30V 36A/85A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:5cc1ff79b60d Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AON6572 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 36A/85A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON6572

Description：MOSFET N-CH 30V 36A/85A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：36A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：65 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：3290 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：6.2W (Ta), 48W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (5x6)
Package / Case：8-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AON6572

AON6572

Single FETs, MOSFETs Overview

The AON6572 is a 30V N-Channel AlphaMOS power MOSFET utilizing Trench Power AlphaMOS (αMOS LV) technology. It features a maximum drain-source voltage of 30V and a continuous drain current of 85A at 25°C case temperature. The device exhibits a low on-resistance of less than 3.2mΩ at VGS=10V and less than 3.9mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage ranging from 1.2V to 2V, a total gate charge of 46.5nC to 65nC at 10V, and an input capacitance of 3290pF. The component is housed in an 8-pin DFN 5x6 package with exposed pad.

Single FETs, MOSFETs Feature Summary

Utilizes Trench Power AlphaMOS (αMOS LV) technology for enhanced performance
Features very low static drain-source on-resistance across standard drive voltages
Capable of high continuous and pulsed drain currents
Includes integrated body diode with optimized reverse recovery characteristics

Single FETs, MOSFETs Applications

DC/DC converters in computing and server applications
Point-of-load (POL) power regulation
Isolated DC/DC converters in telecom equipment
Industrial power supply systems

Single FETs, MOSFETs Procurement Notes

Verify the specific orderable part number against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested units match the specified tape and reel format. Ensure compliance with RoHS and halogen-free requirements as stated in the product summary. Validate that the component meets all applicable export control regulations before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses and high current handling within a 30V system. Consider the thermal resistance values when designing heatsinking strategies for both junction-to-case and junction-to-ambient scenarios. Evaluate the gate charge specifications against the driver capabilities to optimize switching speeds and minimize switching losses during operation.

Single FETs, MOSFETs Part Context

This component belongs to the Alpha & Omega Semiconductor AON series of N-channel power MOSFETs. It is manufactured using advanced trench technology to achieve superior figure-of-merit compared to planar devices. The device is designed for surface-mount assembly, offering a compact footprint suitable for modern high-density electronic circuit boards and power management modules.