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The AON6812 is a dual N-channel Power MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It utilizes Trench Power AlphaMOS (αMOS LV) technology to achieve low on-resistance and gate charge. The device features a common drain configuration within an 8-lead DFN5X6B package with exposed pad. Key electrical parameters include a drain-source voltage of 30V, a continuous drain current of 27A at 25°C, and a maximum on-resistance of 4mΩ at VGS=10V and 6mΩ at VGS=4.5V. It supports logic-level gate drive and includes typical ESD protection rated at HBM Class 3A.
Verify component authenticity against manufacturer datasheets before integration. Confirm the specific package marking and lot date code match the required revision level. Ensure thermal design accounts for junction-to-ambient resistance values under actual operating conditions. Check for end-of-life notices or product change notifications that may affect long-term supply availability.
Select this component when a dual N-channel solution is required in a small footprint. The low RDS(ON) at 4.5V makes it suitable for logic-controlled loads. Evaluate thermal performance based on the specific PCB copper area and airflow conditions, as junction-to-ambient resistance varies significantly with board design.
This part belongs to the AlphaMOS series from Alpha & Omega Semiconductor Inc., focusing on low-voltage power switching applications. The DFN5X6B package provides efficient heat dissipation through the exposed thermal pad. It is designed for consumer electronics where space constraints and efficiency are critical factors.
No direct public substitute part numbers are confirmed in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers' dual N-channel MOSFETs in the same package.