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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 34A (Tc), 13.8A (Ta), 52A (Tc)
- Rds On (Max) @ Id, Vgs：13.7mOhm @ 10A, 10V, 7.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V, 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：910pF @ 15V, 1300pF @ 15V
- Power - Max：1.9W (Ta), 22W (Tc), 2.1W (Ta), 30W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The AON6912ALS is a dual asymmetric N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a 30V drain-source voltage (Vdss) rating and is housed in an 8-DFN surface-mount package with an exposed pad. The device integrates two independent N-channel FETs within a single component, designed for logic-level gate drive applications. Key electrical characteristics include a maximum continuous drain current of 27A at 25°C and a low on-resistance to minimize conduction losses. The component operates within a junction temperature range of -55°C to 150°C and complies with RoHS3 standards.
Feature Summary
- Dual asymmetric configuration integrating two N-channel MOSFETs in one package
- Logic-level gate drive capability for efficient control
- Low thermal resistance design via exposed pad package
- Compliant with RoHS3 environmental standards
Applications
- DC-DC converter synchronous rectification
- Power management circuits in computing systems
- Load switching applications in consumer electronics
Procurement Notes
Verify the exact suffix designation as official documentation references AON6912ALS. Confirm availability status through authorized distributors, as specific sub-models may have varying production lifecycles. Ensure packaging type matches design requirements before ordering.
Selection Notes
Select this component for designs requiring compact dual-N-channel solutions with 30V voltage ratings. Evaluate thermal performance based on the 8-DFN package constraints. Verify gate charge parameters against driver capabilities to ensure optimal switching speeds.
Part Context
This part belongs to the AON691 series of dual asymmetric MOSFETs from Alpha & Omega Semiconductor. It shares functional similarities with other devices in the family but offers specific current and resistance characteristics tailored for space-constrained power applications.
Replacement Considerations
Potential substitutes include other 30V dual asymmetric N-channel MOSFETs from Alpha & Omega such as AON6910A or AON6908A. Verify pinout compatibility and electrical parameters before substitution.
