AON6922

AON6922

  • Description:MOSFET 2N-CH 25V 18A/31A 8DFN
  • Series:-

SKU:b99f37dab115 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 25V 18A/31A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:18A, 31A
  • Rds On (Max) @ Id, Vgs:3.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:1.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2340pF @ 12.5V
  • Power - Max:2W, 2.2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-WDFN Exposed Pad
  • Supplier Device Package:8-DFN-EP (5x6)
  • Grade:-
  • Qualification:-

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AON6922

Overview

The AON6922 is a dual asymmetric N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. under the aMOS™ series. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 19 A at 25°C (case temperature). The device has a maximum gate-source voltage (Vgs) of ±20 V and a threshold voltage (Vgs(th)) of 2.2 V max at 250 µA. Key electrical parameters include a maximum gate charge (Qg) of 13 nC at 10 V, an input capacitance (Ciss) of 820 pF max at 15 V, and a maximum power dissipation of 3.1 W. It operates within a junction temperature range of -55°C to 150°C.

Feature Summary

  • Dual asymmetric configuration integrating two N-channel MOSFETs in a single package for space-constrained designs.
  • Logic-level gate drive capability allowing direct interfacing with standard logic outputs.
  • Low gate charge characteristics facilitating efficient switching performance in high-frequency applications.

Applications

  • DC-DC converter synchronous rectification
  • Load switch circuits in portable electronics
  • Power management modules in computing systems

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS3 compliance status as indicated in official datasheets. Check for specific ordering suffixes that may denote tape-and-reel or cut-tape packaging variations. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering.

Selection Notes

Select this component for applications requiring compact dual-NFET solutions with low voltage ratings. Evaluate thermal management needs given the 3.1 W power dissipation limit in surface-mount packages. Compare gate charge values against driver capabilities to ensure optimal switching speeds. Verify pin compatibility with existing PCB footprints if replacing legacy components.

Part Context

The AON6922 belongs to Alpha & Omega Semiconductor's aMOS™ family of power MOSFETs. This series emphasizes high reliability and efficiency for power management applications. The manufacturer specializes in discrete semiconductors and integrated circuits for consumer, industrial, and automotive markets.

Replacement Considerations

Potential substitutes include other 30V dual asymmetric N-channel MOSFETs from Alpha & Omega such as AON6906A, AON6908A, AON6910A, AON6912A, AON6920, and AON6926. Cross-reference pinouts and electrical parameters before implementation.

FAQ

What is the maximum gate-source voltage rating for the AON6922?

The maximum gate-source voltage (Vgs) is rated at ±20 V.

Is the AON6922 suitable for logic-level driving?

Yes, it features a logic-level gate with a maximum threshold voltage of 2.2 V at 250 µA, allowing direct connection to standard logic outputs.

What is the package type for the AON6922?

The AON6922 is available in an 8-DFN (5x6 mm) surface-mount package.

AON6922AON6922

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