AON7202

Description：MOSFET N-CH 30V 20A/40A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:072c28bd04d6 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AON7202 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 20A/40A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON7202

Description：MOSFET N-CH 30V 20A/40A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 36W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (3x3)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AON7202

AON7202

Single FETs, MOSFETs Overview

The AON7202 is a 30V N-Channel MOSFET utilizing Trench technology for high-frequency switching. It features an extremely low RDS(ON) of <5mΩ at VGS=10V and <6.8mΩ at VGS=4.5V, with a continuous drain current (ID) of 40A at TC=25°C. The device includes a 'Schottky style' soft recovery body diode to control switching behavior. Key electrical parameters include a gate threshold voltage (VGS(th)) max of 2.3V, total gate charge (Qg) max of 33nC at 10V, and input capacitance (Ciss) max of 2200pF. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Optimized Trench MOSFET technology for efficient high-frequency switching performance.
Extremely low combination of on-resistance and reverse transfer capacitance to minimize power losses.
Soft recovery body diode characteristics that ensure well-controlled switching behavior.

Single FETs, MOSFETs Applications

High-frequency power conversion circuits
Low-voltage synchronous rectification applications
DC-DC converter designs requiring fast switching speeds

Single FETs, MOSFETs Procurement Notes

Verify the specific package marking and date code against the manufacturer's latest datasheet revision before integration. Confirm that the application environment remains within the specified thermal limits and voltage ratings. Ensure proper PCB layout techniques are employed to maximize the thermal performance capabilities inherent to the DFN 3x3 EP package design.

Single FETs, MOSFETs Selection Notes

Select this component when designing low-voltage systems requiring high current handling with minimal conduction losses. The low gate charge supports efficient driver requirements, while the robust avalanche rating provides protection against inductive load transients. Evaluate the thermal resistance characteristics relative to the specific copper area available on the printed circuit board.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor’s portfolio of discrete power devices designed for consumer and industrial markets. It represents the company's trench technology advancements aimed at reducing switching losses. The component is intended for general-purpose power management tasks where size and efficiency are critical constraints.