AON7407

$0.77

Description：MOSFET P-CH 20V 14.5A/40A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:152ec9b7626d Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

AON7407 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET P-CH 20V 14.5A/40A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON7407

Description：MOSFET P-CH 20V 14.5A/40A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：14.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：4195 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 29W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (3x3)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AON7407

AON7407

Single FETs, MOSFETs Overview

The AON7407 is a P-Channel Enhancement Mode MOSFET manufactured by Alpha & Omega Semiconductor. It features a -20V drain-source voltage (BVDSS) and supports a continuous drain current of -40A at VGS=-4.5V. The device utilizes advanced trench technology to achieve extremely low on-resistance, specified as less than 9.5mΩ at VGS=-4.5V, 12.5mΩ at VGS=-2.5V, and 18mΩ at VGS=-1.8V. Packaged in a DFN 3x3_EP footprint, it includes 100% UIS and Rg testing.

Single FETs, MOSFETs Feature Summary

Advanced trench MOSFET technology for extremely low on-resistance
Low resistance package design suitable for high current applications
Comprehensive reliability verification including 100% UIS and gate resistance testing

Single FETs, MOSFETs Applications

Load switch circuits
Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the DFN 3x3_EP thermal characteristics align with the target PCB copper area and ambient conditions. Ensure all electrical parameters meet the system requirements under maximum junction temperature limits.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for low-voltage power management. The low gate charge and fast switching speeds make it appropriate for efficient load switching. Evaluate the thermal performance based on the specific application's heat dissipation capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the Alpha & Omega Semiconductor P-Channel MOSFET family. It is designed using trench technology to optimize conduction losses and switching performance within a small form factor package.