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AON7422E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 20A/40A 8DFN. Review the specifications below when checking this part for your BOM.
The AON7422E is a 30V N-Channel MOSFET utilizing advanced trench technology for low on-resistance. It features a maximum drain-source voltage of 30V and a continuous drain current of 40A at VGS=10V. The device offers an RDS(ON) of less than 4.3mΩ at VGS=10V and less than 6.0mΩ at VGS=4.5V. Total gate charge is 50nQ max at 10V. It operates within a junction temperature range of -55°C to 150°C and is housed in an 8-DFN 3x3 EP package.
Verify the specific suffix 'E' against the manufacturer's official documentation to confirm exact electrical tolerances and packaging specifications. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the DFN 3x3 EP footprint matches your PCB design constraints before finalizing procurement orders.
Select this component when a 30V rating and high current handling up to 40A are required. Consider the low thermal impedance for efficient heat dissipation in compact designs. Evaluate the gate charge characteristics against driver capabilities to ensure optimal switching performance in power management applications.
This part belongs to the Alpha & Omega Semiconductor N-Channel MOSFET family, designed for consumer electronics and industrial systems. It utilizes trench technology to minimize conduction losses while maintaining robust avalanche energy ratings. The device is qualified for the consumer market and supports surface-mount assembly.
Check datasheets for alternative parts offering similar 30V ratings and comparable RDS(ON) values. Verify pinout compatibility with the 8-DFN 3x3 EP package. Ensure thermal characteristics and maximum current ratings meet or exceed the original specifications.
The maximum pulsed drain current (IDM) is 200A.
Yes, the AON7422E is 100% UIS tested and has a single pulse avalanche energy rating of 45mJ.
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