Single FETs, MOSFETs AON7422E product image

AON7422E

  • Description:MOSFET N-CH 30V 20A/40A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:abfdef848334 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AON7422E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 20A/40A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON7422E

  • Description:MOSFET N-CH 30V 20A/40A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:4.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2940 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta), 36W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN-EP (3x3)
  • Package / Case:8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AON7422E

AON7422E

Single FETs, MOSFETs Overview

The AON7422E is a 30V N-Channel MOSFET utilizing advanced trench technology for low on-resistance. It features a maximum drain-source voltage of 30V and a continuous drain current of 40A at VGS=10V. The device offers an RDS(ON) of less than 4.3mΩ at VGS=10V and less than 6.0mΩ at VGS=4.5V. Total gate charge is 50nQ max at 10V. It operates within a junction temperature range of -55°C to 150°C and is housed in an 8-DFN 3x3 EP package.

Single FETs, MOSFETs Feature Summary

  • Combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
  • Includes ESD protection and undergoes 100% UIS and Rg testing.
  • Designed specifically for load switch and battery protection applications.

Single FETs, MOSFETs Applications

  • Load switch circuits
  • Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'E' against the manufacturer's official documentation to confirm exact electrical tolerances and packaging specifications. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the DFN 3x3 EP footprint matches your PCB design constraints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V rating and high current handling up to 40A are required. Consider the low thermal impedance for efficient heat dissipation in compact designs. Evaluate the gate charge characteristics against driver capabilities to ensure optimal switching performance in power management applications.

Single FETs, MOSFETs Part Context

This part belongs to the Alpha & Omega Semiconductor N-Channel MOSFET family, designed for consumer electronics and industrial systems. It utilizes trench technology to minimize conduction losses while maintaining robust avalanche energy ratings. The device is qualified for the consumer market and supports surface-mount assembly.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering similar 30V ratings and comparable RDS(ON) values. Verify pinout compatibility with the 8-DFN 3x3 EP package. Ensure thermal characteristics and maximum current ratings meet or exceed the original specifications.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is 200A.

Is the device tested for avalanche capability?

Yes, the AON7422E is 100% UIS tested and has a single pulse avalanche energy rating of 45mJ.

AON7422EAON7422E

Click on the inquiry