AON7450

Single FETs, MOSFETs Overview

The AON7450 is an N-channel MOSFET from Alpha & Omega Semiconductor, utilizing SDMOSTM trench technology. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 5.6 A at ambient temperature or 21 A at case temperature. The device offers a maximum on-resistance (Rds(on)) of 48 mΩ at 10 V gate-source voltage. Power dissipation is rated at 3.1 W (Ta) and 43 W (Tc). It operates within a junction temperature range of -55°C to 150°C and is housed in an 8-DFN-EP (3x3) surface-mount package.

Single FETs, MOSFETs Feature Summary

• SDMOSTM trench technology for low on-resistance and gate charge
• High efficiency due to low Qrr characteristics
• Robust thermal performance with elevated case temperature current rating

Single FETs, MOSFETs Applications

• Power management circuits requiring high efficiency
• DC-DC converter designs
• Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm packaging type, as variations exist between tape-and-reel and cut tape formats. Confirm RoHS compliance status and moisture sensitivity level (MSL 1) against project requirements. Ensure the supplier provides original manufacturer documentation to validate part authenticity and traceability before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rating is required alongside moderate current handling capabilities. The 8-DFN-EP package suits space-constrained designs needing efficient heat dissipation through the exposed pad. Consider the trade-off between the 48 mΩ Rds(on) and gate charge for switching frequency optimization in power supply topologies.

Single FETs, MOSFETs Part Context

This device belongs to the AON series of power MOSFETs from Alpha & Omega Semiconductor. It represents a segment of products optimized for general-purpose power switching where efficiency and thermal robustness are prioritized over extreme current capacity found in larger packages.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 100 V Vdss, N-channel configuration, and compatible pinout within the 8-DFN-EP footprint. Verify that alternative parts meet or exceed the 48 mΩ Rds(on) and 5.6 A Id specifications to ensure circuit performance parity.