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AON7566 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CHANNEL 30V 34A 8DFN. Review the specifications below when checking this part for your BOM.
The AON7566 is a 30V N-Channel AlphaMOS (αMOS LV) Trench Power MOSFET in a DFN 3x3 EP package. It features low on-resistance and high current capability, optimized for load switch applications. Key electrical parameters include a drain-source voltage of 30V, continuous drain current of 34A at VGS=10V, and RDS(ON) less than 3.7mΩ at VGS=10V or 5.2mΩ at VGS=4.5V. The device includes typical ESD protection rated HBM Class 2 and is 100% UIS tested.
Verify the specific ordering suffix to confirm the tape and reel packaging format, as the standard listing indicates a minimum order quantity of 5000 units. Ensure compliance requirements match project needs, as the component is RoHS and Halogen-Free compliant. Confirm that the DFN 3x3 EP package dimensions align with the target PCB footprint before finalizing procurement orders.
Select this component when a 30V N-Channel MOSFET with low on-resistance is required for load switching. The DFN 3x3 EP package offers a compact form factor suitable for space-constrained designs. Consider the thermal characteristics and power dissipation limits relative to the application's ambient temperature and board copper area to ensure reliable operation under steady-state conditions.
Manufactured by Alpha & Omega Semiconductor, the AON7566 belongs to the AlphaMOS product line utilizing advanced trench technology. This series focuses on providing efficient power solutions for consumer electronics and portable devices. The component is designed to minimize conduction losses while maintaining robust performance in high-current scenarios typical of modern mobile and battery-powered systems.
No public confirmed substitute part numbers are available in the provided documentation.
Yes, the datasheet confirms that the device is 100% UIS tested.
The gate threshold voltage ranges from 1.4V to 2.4V at TJ=25°C.
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