AON7932_101

Overview

The AON7932 is a dual asymmetric N-channel MOSFET in a Power DFN3x3A package. It integrates two specialized transistors for synchronous buck converters. Q1 (High Side) features low gate charge to minimize switching losses, while Q2 (Low Side) utilizes advanced trench technology with an integrated Schottky diode for low RDS(ON). The device supports a drain-source voltage of 30V. Q1 offers a maximum on-resistance of <20mΩ at VGS=10V and <30mΩ at VGS=4.5V. Q2 provides <12mΩ at VGS=10V and <15mΩ at VGS=4.5V. Both channels are 100% UIS tested.

Feature Summary

• Dual asymmetric configuration integrating high-side and low-side MOSFETs in a single compact package.
• Optimized layout designed for high-efficiency synchronous buck power stages.
• Q1 channel engineered to minimize switching losses through reduced gate charge.
• Q2 channel incorporates advanced trench technology and a monolithically integrated Schottky diode.

Applications

• Compact DC/DC converter applications
• Synchronous buck power stage designs

Procurement Notes

Verify the component against the official Alpha & Omega Semiconductor datasheet Rev.3.0. Confirm the package type is Power DFN3x3A and check for specific ordering suffixes if required by the design. Ensure the source documentation matches the manufacturer's part identification exactly.

Selection Notes

Select this component for space-constrained synchronous buck converters requiring optimized thermal performance. The asymmetric design allows independent optimization of switching and conduction losses. Verify that the 30V rating and current capabilities meet the specific circuit requirements.

Part Context

This component belongs to the Alpha & Omega Semiconductor dual MOSFET family. It is specifically designed to replace discrete high-side and low-side MOSFET solutions in synchronous rectification topologies, offering improved board space utilization and electrical performance.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's cross-reference tools or updated product lists for potential replacements.

FAQ

What is the maximum Drain-Source Voltage (BVDSS) for the AON7932?

The maximum Drain-Source Voltage (BVDSS) is 30V.

How does the Q2 channel differ from the Q1 channel?

The Q2 channel uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON), whereas the Q1 channel is designed to minimize switching losses.

Is the AON7932 tested for Unclamped Inductive Switching (UIS)?

Yes, both channels are 100% UIS tested.