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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 13A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
- Rds On (Max) @ Id, Vgs：10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V, 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：485pF @ 15V, 807pF @ 15V
- Power - Max：2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WDFN Exposed Pad
- Supplier Device Package：8-DFN-EP (3x3)
- Grade：-
- Qualification：-
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Overview
The AON7934 is a dual asymmetric N-Channel AlphaMOS power device featuring two independent channels within a single Power DFN3x3A package. Channel Q1 provides a continuous drain current of 16A with an on-resistance below 10.2mΩ at VGS=10V, while Channel Q2 delivers 18A with resistance under 7.7mΩ. Both channels maintain low on-resistance at VGS=4.5V, supporting logic-level driving. The component operates with a drain-source voltage of 30V and includes 100% UIS and Rg testing for reliability.
Feature Summary
- Dual asymmetric configuration integrating two N-Channel MOSFETs in a compact footprint
- Low gate charge characteristics enabling high-speed switching performance
- Optimized on-resistance at 4.5V gate-source voltage for efficient logic-level drive compatibility
Applications
- DC/DC converters in computing systems
- Point-of-load (POL) applications in servers
- Isolated DC/DC converters in telecom infrastructure
- Industrial power supply designs
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm exact packaging and tape specifications. Confirm RoHS compliance status and environmental declarations prior to integration. Ensure the component meets all absolute maximum ratings for the intended operating temperature range and thermal management requirements.
Selection Notes
Select this component for applications requiring asymmetric current handling where one channel supports higher load currents than the other. Evaluate thermal dissipation capabilities based on the junction-to-ambient resistance values provided in the datasheet. Consider the low gate charge parameters when designing driver circuits for high-frequency switching operations.
Part Context
This part belongs to the AlphaMOS product line utilizing Trench technology. It is designed as a space-saving solution for power management modules. The dual-channel architecture allows for simplified board layouts in half-bridge or synchronous rectifier configurations compared to using discrete single-channel devices.
Replacement Considerations
Direct replacements must match the 30V rating, dual N-Channel configuration, and DFN3x3A package dimensions. Verify that substitute components offer comparable on-resistance values at both 10V and 4.5V gate voltages to ensure equivalent switching efficiency and drive requirements.
