AONP36332

$1.50

Description：MOSFET 2N-CH 30V 24A 8DFN
Series：-

SKU:ebe5e3264603 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 24A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs：3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1520pF @ 15V
Power - Max：3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：8-DFN-EP (3.3x3.3)
Grade：-
Qualification：-

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AONP36332

Overview

The AONP36332 is a dual asymmetric N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a DFN3.3x3.3B package with bottom source technology for low thermal resistance. The device supports a drain-source voltage of 30V and continuous drain currents up to 50A at TC=100°C. Static on-resistance is less than 3.7mΩ at VGS=10V for Q1 and less than 4.7mΩ for Q2. Gate charge is typically 40nC at 10V for Q1 and 30nC for Q2. Thermal characteristics include a junction-to-case resistance of 3.8°C/W for Q1 and 4.2°C/W for Q2.

Feature Summary

Bottom source technology design
Very low RDS(ON) at Vgs 4.5V
Low gate charge
High current capability

Applications

Buck-boost converters in computing
Point of load converter

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm package type and reel specifications. Ensure compliance with RoHS 2.0 and halogen-free requirements as stated in the datasheet. Confirm that the component meets all electrical parameters required for the intended circuit design before finalizing procurement.

Selection Notes

Evaluate the asymmetric configuration where Q1 and Q2 have distinct on-resistance values. Consider the thermal resistance from junction to case when designing heat dissipation strategies. Verify compatibility with the target gate drive voltage levels, particularly for applications requiring operation at Vgs=4.5V.

Part Context

This component belongs to the AONP series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. It utilizes a DFN3.3x3.3B surface-mount package designed for high power density applications. The product line emphasizes low on-resistance and efficient switching performance.