Single FETs, MOSFETs AONR34332C product image

AONR34332C

$0.37
  • Description:MOSFET N-CH 30V 48A/50A 8DFN
  • Series:AlphaMOS
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:d4e77b35299f Category: Brand:

  
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AONR34332C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 48A/50A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONR34332C

  • Description:MOSFET N-CH 30V 48A/50A 8DFN
  • Series:AlphaMOS
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:48A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:4175 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):6.2W (Ta), 83.3W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN-EP (3.3x3.3)
  • Package / Case:8-PowerWDFN

Single FETs, MOSFETs datasheet and documents for AONR34332C

AONR34332C

Single FETs, MOSFETs Overview

The AONR34332C is a 30V N-Channel Power MOSFET utilizing Trench technology. It features low on-resistance, with RDS(ON) values below 1.6mΩ at VGS=10V, 1.9mΩ at VGS=4.5V, and 2.9mΩ at VGS=2.5V. The device supports a continuous drain current of 100A and a pulsed drain current of 32A. It includes typical ESD protection at HBM Class 2 levels and has undergone 100% UIS and Rg testing.

Single FETs, MOSFETs Feature Summary

  • Trench Power MOSFET technology for enhanced performance
  • Low RDS(ON) characteristics optimized for 2.5V gate drive
  • Low gate charge for efficient switching operations
  • RoHS and Halogen-Free compliant construction

Single FETs, MOSFETs Applications

  • Load switch applications in portable devices
  • Battery switch implementations in portable electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm package type and reel quantity. Ensure compatibility with RoHS and Halogen-Free compliance requirements. Confirm thermal management design aligns with junction-to-case and junction-to-ambient resistance specifications for the intended operating environment.

Single FETs, MOSFETs Selection Notes

Select this component for high-current portable applications requiring low conduction losses at reduced gate voltages. Evaluate thermal dissipation capabilities based on the specific PCB copper area and ambient conditions. Consider the low gate charge for driving efficiency in battery-powered systems.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of power MOSFETs designed for consumer and industrial applications. The manufacturer specializes in trench technology to achieve low on-resistance and fast switching speeds within compact packages suitable for space-constrained designs.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum Drain-Source Voltage (BVDSS) is rated at 30V.

Is the device tested for unclamped inductive switching?

Yes, the datasheet confirms that 100% of units undergo Unclamped Inductive Switching (UIS) testing.

AONR34332CAONR34332C
$0.37
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