AONR36328

$0.11

Description：N
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:dabc1d7198b8 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AONR36328 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONR36328

Description：N
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：700 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 24W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (3x3)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AONR36328

AONR36328

Single FETs, MOSFETs Overview

The AONR36328 is a 30V N-Channel Power MOSFET utilizing Trench technology in a DFN 3x3 EP package. It features a maximum drain-source voltage of 30V and continuous drain current of 20A at VGS=10V. The device exhibits low on-resistance, with RDS(ON) less than 8.4mΩ at VGS=10V and less than 11.5mΩ at VGS=4.5V. Total gate charge is typically 11nC at 10V and 5nC at 4.5V. Thermal resistance from junction to case is 5.2°C/W, supporting applications requiring high current capability and efficient switching performance.

Single FETs, MOSFETs Feature Summary

Low static drain-source on-resistance optimized for both 10V and 4.5V gate drive conditions
High current capability with 20A continuous drain rating
Low gate charge characteristics for improved switching efficiency
Robust avalanche energy handling verified through 100% UIS testing

Single FETs, MOSFETs Applications

DC/DC converters in computing and server systems
Point-of-load (POL) power stages
Isolated DC/DC converters in telecom infrastructure
Industrial power supply designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component meets RoHS and halogen-free compliance requirements for your assembly process. Ensure the design accommodates the thermal constraints defined by the junction-to-case resistance values provided in the datasheet specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact DFN footprint is required alongside high current density. The low RDS(ON) at 4.5V makes it suitable for logic-level driving applications. Evaluate the thermal management strategy based on the specified junction-to-ambient resistance for your specific PCB copper area and airflow conditions.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's 30V N-Channel MOSFET portfolio. It utilizes Trench Power MOSFET technology to achieve low on-resistance and fast switching speeds. The DFN 3x3 EP package provides a small surface-mount form factor with an exposed pad for enhanced thermal dissipation compared to standard packages.