AONR66922

$1.68

Description：MOSFET N-CH 100V 15A/50A 8DFN
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3c2ae3b06e33 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AONR66922 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 100V 15A/50A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONR66922

Description：MOSFET N-CH 100V 15A/50A 8DFN
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2180 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：4.1W (Ta), 52W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (3.3x3.3)
Package / Case：8-PowerWDFN

Single FETs, MOSFETs datasheet and documents for AONR66922

AONR66922

Single FETs, MOSFETs Overview

The AONR66922 is a 100V N-Channel MOSFET utilizing AlphaSGT™ trench technology. It features a maximum continuous drain current of 80A and a low on-resistance of less than 9mΩ at VGS=10V, or 12mΩ at VGS=4.5V. The device is housed in a DFN 3.3x3.3 EP package with an exposed pad for thermal management. Key electrical parameters include a gate threshold voltage ranging from 1.5V to 2.5V, total gate charge of 46nC at 10V, and input capacitance of 2180pF. Thermal characteristics specify a junction-to-case resistance of 1.1°C/W and a junction-to-ambient resistance of 60°C/W.

Single FETs, MOSFETs Feature Summary

Logic level gate drive capability supporting operation at 4.5V
High avalanche energy rating validated through 100% UIS testing
Low gate charge design optimized for switching efficiency
Robust body diode performance verified via reverse recovery testing

Single FETs, MOSFETs Applications

PD Adaptor power supplies
Synchronous rectification in DC/DC converters
Synchronous rectification in AC/DC converters
Battery chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity of 3000 units. Confirm compliance with RoHS 2.0 and halogen-free standards as stated in the datasheet. Ensure the procurement documentation references the correct manufacturer part number AONR66922 to avoid substitution errors with similar packages.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling in compact surface-mount designs. The low RDS(ON) minimizes conduction losses, while the logic-level gate drive simplifies driver circuit requirements. Consider the thermal resistance values when designing PCB copper areas to ensure junction temperatures remain within the specified -55°C to 150°C operating range.

Single FETs, MOSFETs Part Context

This device belongs to the AlphaSGT™ family of trench power MOSFETs manufactured by Alpha & Omega Semiconductor Inc. The series is engineered to provide superior on-resistance and switching performance compared to standard planar technologies. The DFN 3.3x3.3 EP package offers a small footprint suitable for dense board layouts while maintaining adequate thermal dissipation capabilities for power management applications.