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AONR66924 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.
The AONR66924 is a 100V N-Channel Power MOSFET utilizing AlphaSGT™ trench technology in an 8-pin DFN 3x3 EP package. It features a maximum drain-source voltage of 100V and a continuous drain current of 32A at 25°C case temperature. The device offers a typical on-resistance of 13.5mΩ at VGS=10V and 18mΩ at VGS=4.5V, with a total gate charge of 40nC at 10V. Thermal performance includes a junction-to-case resistance of 4.2°C/W and a junction-to-ambient resistance of 55°C/W. It supports a maximum junction temperature of 150°C.
Verify the specific ordering suffix to confirm the tape and reel packaging format, as standard availability may vary by distributor. Confirm RoHS compliance status and ensure the component meets environmental regulations for the target market. Validate that the DFN 3x3 EP footprint matches the intended PCB layout requirements before finalizing procurement.
Select this component for applications requiring low RDS(ON) within a compact surface-mount footprint. The logic-level drive capability makes it suitable for direct interfacing with standard logic controllers. Ensure thermal management design accounts for the specified junction-to-ambient resistance when operating without additional heatsinking.
This part belongs to the AlphaSGT™ family of power MOSFETs from Alpha & Omega Semiconductor. It is designed for high-efficiency power conversion applications where space constraints are critical. The DFN 3x3 EP package provides robust thermal dissipation capabilities relative to its small physical size.
No public confirmed substitute part numbers are documented in the provided source material.
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