AONS1R6A70

Single FETs, MOSFETs Overview

The AONS1R6A70 is an N-channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 700 V and a continuous drain current (Id) of 1.1 A at ambient temperature, rising to 4.6 A at case temperature. The device utilizes an 8-DFN-EP (5x6) surface-mount package. Key electrical parameters include a maximum on-resistance (Rds(on)) of 1.6 ohms at 10 V gate drive, a gate charge (Qg) of 3.5 nC at 10 V, and an input capacitance (Ciss) of 354 pF at 100 V. It operates within a junction temperature range of -55°C to 150°C with power dissipation ratings of 4.1 W (Ta) and 78 W (Tc).

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 700 V drain-source breakdown voltage for robust operation in demanding environments.
• Ultra-low gate charge characteristics enabling fast switching speeds and reduced dynamic power losses.
• Compact 8-DFN-EP surface-mount packaging designed for efficient thermal management and high-density board layouts.

Single FETs, MOSFETs Applications

• High-voltage DC-DC converter circuits
• Power factor correction (PFC) stages
• Industrial motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and tape-and-reel quantity against the manufacturer's latest datasheet before ordering. Confirm RoHS compliance status and ensure the supplier provides valid traceability documentation. Cross-reference the part number with official Alpha & Omega Semiconductor databases to avoid counterfeit components and ensure compatibility with design specifications.

Single FETs, MOSFETs Selection Notes

Select this component when high blocking voltage is required alongside low gate charge for efficiency. The 8-DFN-EP package suits applications needing compact footprints with adequate thermal performance. Ensure the driving circuit can support the specified gate voltage thresholds and that the PCB layout accommodates the exposed pad for optimal heat dissipation under load conditions.

Single FETs, MOSFETs Part Context

This device belongs to Alpha & Omega Semiconductor’s portfolio of discrete power MOSFETs. The company specializes in integrating process technology with advanced packaging to deliver high-performance solutions for data centers, automotive electronics, and industrial power supplies. The AONS1R6A70 represents their focus on high-voltage, low-gate-charge technologies for modern power conversion needs.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent 700 V N-channel MOSFETs in 8-DFN packages. Verify pinout compatibility and thermal resistance values before replacing. No direct substitute part numbers are confirmed in public documentation without further datasheet comparison.