AONS32306

$0.28

Description：MOSFET N-CH 30V 36A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:36471e07b6ce Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AONS32306 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 36A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONS32306

Description：MOSFET N-CH 30V 36A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4080 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：6.2W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (5x6)
Package / Case：8-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AONS32306

AONS32306

Single FETs, MOSFETs Overview

The AONS32306 is a surface-mount N-channel MOSFET from Alpha & Omega Semiconductor, housed in an 8-DFN (5x6) package. It features a drain-source voltage of 30V and a continuous drain current of 36A at 25°C case temperature. The device utilizes advanced trench technology to achieve a low on-resistance of less than 3.6mΩ at VGS=10V and 4.7mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage maximum of 2.1V, total gate charge of 90nC at 10V, and input capacitance of 4080pF. Thermal characteristics specify a junction-to-case resistance of 2.5°C/W and a junction-to-ambient resistance of 55°C/W.

Single FETs, MOSFETs Feature Summary

Advanced Trench Technology for optimized performance
Low On-Resistance across standard gate drive voltages
High Current Capability suitable for power applications
100% Unclamped Inductive Switching (UIS) Tested

Single FETs, MOSFETs Applications

Load Switch
Battery Protection

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm packaging format and quantity. Ensure component authenticity by checking markings against official datasheet specifications. Confirm RoHS compliance status if required by project standards. Validate thermal management requirements based on actual board copper area and airflow conditions rather than theoretical limits.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring a 30V N-channel switch with high current handling. Consider the 8-DFN package dimensions for PCB layout constraints. Evaluate thermal dissipation needs relative to the junction-to-ambient resistance in still air environments. Verify that the gate drive voltage meets the minimum requirement for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the AONS323 series of power MOSFETs manufactured by Alpha & Omega Semiconductor. It is designed for general-purpose switching applications where low conduction losses are critical. The product line emphasizes reliability through rigorous testing protocols including UIS validation.