AONS420A60

$0.96

Description：N
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:e89b7e5dfd65 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

AONS420A60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONS420A60

Description：N
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：420mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：955 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：156W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN-EP (5x6)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AONS420A60

AONS420A60

Single FETs, MOSFETs Overview

The AONS420A60 is a 600V N-Channel Power Transistor utilizing Alpha & Omega Semiconductor's aMOS5 technology. It features a maximum drain-source breakdown voltage of 700V and a pulsed drain current of 44A. The device exhibits a maximum on-resistance of 1Hz) ±30 V, with a gate threshold voltage ranging from 2.6V to 3.8V. Total gate charge is typically 18nC at 10V. Thermal resistance junction-to-case is 0.8°C/W, while junction-to-ambient is 55°C/W in still air. The component operates within a temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Utilizes advanced aMOS5 high-voltage process for robust switching performance
Features low total gate charge and optimized capacitance characteristics
Includes integrated body diode with specified reverse recovery parameters
Designed for high dv/dt ruggedness and avalanche capability

Single FETs, MOSFETs Applications

Offline power supply designs
High-frequency switching applications
General-purpose power transistor circuits requiring high voltage isolation

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (Rev2.2 or later) matches your design requirements. Confirm that the DFN5x6F package footprint aligns with your PCB layout constraints. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 600V rating is required alongside moderate current handling capabilities. Consider the aMOS5 technology benefits for efficiency in high-frequency environments. Evaluate the thermal resistance specifications against your system's cooling infrastructure to ensure reliable operation within the 150°C maximum junction temperature limit.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of high-voltage power transistors. The manufacturer specializes in MOSFETs and IGBTs for power management applications. The aMOS5 series represents their latest generation of silicon-based power devices designed for improved performance metrics compared to previous iterations.