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AONS66909 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.
The AONS66909 is a 100V N-Channel AlphaSGT™ Trench Power MOSFET in an 8-DFN(5x6) package. It features a maximum drain-source voltage (VDS) of 100V and continuous drain current (ID) of 160A at VGS=10V. The on-resistance (RDS(ON)) is less than 4.2mΩ at VGS=10V and 4.8mΩ at VGS=8V, with a gate charge (Qg) of 75nC at 10V. Thermal resistance junction-to-case (RθJC) is 0.6°C/W, supporting up to 208W power dissipation at TC=25°C.
Verify the specific ordering suffix matches the required tape and reel quantity of 3000 units. Confirm that the component meets RoHS 2.0 standards and is halogen-free as specified in the datasheet. Ensure the package type corresponds to the DFN 5x6 form factor for proper PCB footprint compatibility.
Select this component for designs requiring high current handling up to 160A and low conduction losses below 4.8mΩ. Consider the thermal characteristics, specifically the 0.6°C/W junction-to-case resistance, when designing heatsinking solutions. Verify that the gate drive voltage supports the specified RDS(ON) thresholds.
This part belongs to the AlphaSGT™ series from Alpha & Omega Semiconductor Inc., designed for power management applications. It is a single FET MOSFET utilizing trench technology. The device is currently listed as an active product available in tape and reel packaging.
No public confirmed substitute part numbers are documented in the provided source material.
The maximum pulsed drain current (IDM) is 340A.
Yes, the datasheet specifies that the device undergoes 100% UIS testing.
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