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AONS66916T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is LINEAR IC. Review the specifications below when checking this part for your BOM.
The AONS66916T is a surface-mount N-channel MOSFET from Alpha & Omega Semiconductor, utilizing the AlphaSGT™ series technology. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 100A at case temperature (Tc). The device operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±20 V, a gate charge (Qg) of 95 nC at 10 V, and an input capacitance (Ciss) of 5325 pF at 50 V. The on-resistance (Rds(on)) is specified as 3.6 mΩ at 10 V gate drive with 20 A drain current. Power dissipation reaches 215 W at Tc. It is housed in an 8-DFN(5x6) package.
Verify the specific suffix 'T' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure the component matches the standard AONS66916 electrical characteristics. Confirm RoHS compliance status and moisture sensitivity level prior to integration into the production line.
Select this component for designs requiring high current handling in a compact surface-mount footprint. The 100V rating suits intermediate voltage bus applications. Evaluate thermal management requirements given the 215W dissipation rating at case temperature. Consider the 3.6mΩ on-resistance for minimizing conduction losses in high-current paths.
This part belongs to the AlphaSGT™ family of superjunction MOSFETs from Alpha & Omega Semiconductor. These devices are engineered for high-volume consumer, industrial, and automotive electronics. The 8-DFN package offers improved thermal performance compared to traditional plastic packages, supporting dense PCB layouts.
Check for electrically identical variants such as AONS66919 which shares the same package but differs in current and resistance ratings. Verify pinout compatibility before substituting with other 8-DFN MOSFETs from different manufacturers.
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