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AONV210A60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 4.1A/20A 4DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AONV210A60
- Description：MOSFET N-CH 600V 4.1A/20A 4DFN
- Series：aMOS5™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4.1A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：210mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1935 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：8.3W (Ta), 208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-DFN (8x8)
- Package / Case：4-PowerTSFN
Single FETs, MOSFETs datasheet and documents for AONV210A60
Single FETs, MOSFETs Overview
The AONV210A60 is an N-Channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 600 V and continuous drain current ratings of 4.1 A at ambient temperature (Ta) and 20 A at case temperature (Tc). The device has a maximum on-resistance (Rds(on)) of 210 mΩ. Thermal performance includes a power dissipation of 8.3 W at Ta and 208 W at Tc. It is housed in a surface-mount 4-DFN (8x8) package.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 600 V drain-source breakdown voltage for robust operation in high-power applications.
- Advanced AmpStack™ packaging technology designed to enhance power density and thermal efficiency.
- Optimized low on-resistance characteristics to minimize conduction losses during switching operations.
Single FETs, MOSFETs Applications
- Data center power supply units
- AI server power management systems
- Industrial motor controls
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and reliability report status before integration, as Alpha & Omega Semiconductor may update product specifications or manufacturing locations. Confirm that the 4-DFN (8x8) footprint matches your PCB design constraints. Ensure compliance with RoHS3 and REACH regulations required for your target market. Check for any recent Product Change Notifications (PCN) regarding component sourcing or assembly processes.
Single FETs, MOSFETs Selection Notes
Select this component when a 600 V rating is required for high-efficiency power conversion. The 4.1 A continuous current rating suits compact designs where thermal management via the case is feasible. Compare Rds(on) values against alternative packages to ensure optimal efficiency for the specific load conditions. Consider the thermal resistance characteristics of the DFN package relative to the expected operating environment.
Single FETs, MOSFETs Part Context
Alpha & Omega Semiconductor Inc. specializes in discrete power devices and wide bandgap solutions. The AONV210A60 belongs to the αMOS5 series, representing their advanced silicon MOSFET technology. This series targets high-volume applications requiring high power density and improved thermal performance through proprietary packaging innovations like AmpStack™.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Alpha & Omega Semiconductor resources for qualified alternatives.
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