ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 18.5A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
- Rds On (Max) @ Id, Vgs：5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA, 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V, 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：820pF @ 15V, 2555pF @ 15V
- Power - Max：3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerSMD, Flat Leads
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
Download product information
Overview
The AONY36352 is a dual asymmetric N-channel MOSFET array from Alpha & Omega Semiconductor, housed in an 8-DFN (5x6mm) package. It features Trench Power MOSFET technology for low on-resistance and high current capability. The device includes two independent channels with distinct electrical characteristics: Q1 offers a maximum RDS(ON) of 5.3mΩ at VGS=10V and supports a continuous drain current of 49A, while Q2 provides a lower RDS(ON) of 2mΩ at VGS=10V with a continuous drain current of 85A. Both channels share a 30V drain-source voltage rating and are tested for 100% UIS and gate resistance.
Feature Summary
- Dual asymmetric configuration with optimized channel separation for specific load requirements
- Trench Power MOSFET technology enabling low on-resistance and efficient switching performance
- Comprehensive reliability validation including 100% Unclamped Inductive Switching (UIS) and Gate Resistance testing
Applications
- DC/DC Converters in Computing
- Point-of-Load (POL) regulation in Telecom systems
- Point-of-Load (POL) regulation in Industrial applications
Procurement Notes
Verify the component authenticity by checking the manufacturer's marking code against official datasheet specifications. Ensure the ordering suffix matches the required tape and reel packaging format. Confirm RoHS compliance status if environmental regulations apply to the assembly process. Validate that the received part number corresponds exactly to the AONY36352 designation to avoid pinout mismatches in the DFN 5x6D package.
Selection Notes
Select this component when designing circuits requiring asymmetric current handling within a single package footprint. The distinct RDS(ON) values between Q1 and Q2 allow for tailored thermal management strategies. Consider the 30V voltage rating and the specific gate charge requirements for driving efficiency. Evaluate the thermal resistance parameters against the expected power dissipation in the target application environment.
Part Context
This device belongs to Alpha & Omega Semiconductor's portfolio of trench power MOSFET arrays. It is designed to replace discrete solutions in space-constrained designs. The DFN 5x6D package provides improved thermal performance compared to standard small signal packages. It serves as a compact alternative for multi-phase converter designs or mixed-load applications.
Replacement Considerations
Direct replacements must match the 30V rating, DFN 5x6D package, and asymmetric channel characteristics. Verify pin compatibility, specifically the shared drain and separate gate/source configurations. Check that the replacement device meets the same UIS test standards and thermal resistance limits to ensure circuit reliability without redesign.
