AOSD62666E

$1.44

Description：MOSFET 2N-CH 60V 9.5A 8SOIC
Series：-

SKU:bc67f4142b6d Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 9.5A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
Rds On (Max) @ Id, Vgs：14.5mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：755pF @ 30V
Power - Max：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AOSD62666E

Overview

The AOSD62666E is a dual N-channel AlphaSGT™ trench power MOSFET with a 60V drain-source voltage rating. It features a low on-resistance of less than 14.5mΩ at VGS=10V and 19mΩ at VGS=4.5V, supporting a continuous drain current of 9.5A. The device includes typical ESD protection (HBM Class 2) and has been subjected to 100% UIS and Rg testing. Packaged in an SO-8 tape and reel format with 3000 units per minimum order quantity, it operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Dual N-channel configuration utilizing AlphaSGT™ technology for optimized performance
Logic level gate drive capability ensuring efficient switching at low voltages
Robust avalanche energy handling verified through comprehensive Unclamped Inductive Switching (UIS) testing

Applications

Motor control systems
Industrial load switching
Lighting applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and reel specifications. Ensure compliance with RoHS and halogen-free requirements as stated in the product summary. Confirm that the intended application does not involve life support devices, as such usage is explicitly unauthorized by the manufacturer.

Selection Notes

Select this component for designs requiring dual N-channel isolation in a compact SO-8 footprint. The low gate charge characteristics make it suitable for high-frequency switching applications. Evaluate thermal management strategies based on the specified junction-to-ambient resistance values under your specific board layout conditions.

Part Context

This part belongs to the AlphaSGT™ family from Alpha & Omega Semiconductor Inc., designed for general-purpose power switching. The dual-channel architecture allows for space-efficient implementation in bridge or half-bridge configurations without requiring separate discrete components.